High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing
High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing
Lazar, M.; Ottaviani, L.; Locatelli, M. L.; Raynaud, D.; Planson, D.; Morvan, E.; Godignon, P.; Skorupa, W.; Chante, J. P.
no abstract
- Materials Science Forum 353-356 (2001) 571
Permalink: https://www.hzdr.de/publications/Publ-5035
Publ.-Id: 5035
