Study of photoluminescence in SiOxNy films implanted with Ge ions and annealed under the conditions of hydrostatic pressure

Tyschenko, I. E.; Zhuravlev, K. S.; Vandyshev, E. N.; Misiuk, A.; Yankov, R. A.; Rebohle, L.; Skorupa, W.

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Publ.-Id: 5040