Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing
Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing
Tyschenko, I. E.; Zhuravlev, K. S.; Vadyshev, E. N.; Misiuk, A.; Rebohle, L.; Skorupa, W.; Yankov, R. A.; Popov, V. P.
no abstract delivered from author
- Optical Materials 17 (2001) 99
Permalink: https://www.hzdr.de/publications/Publ-5042
Publ.-Id: 5042