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Electroluminescence of silicon pn diode produced by boron implantation
Sun, J. M.; Dekorsy, T.; Skorupa, W.; Schmidt, B.; Helm, M.
Large improvement of the electroluminescence efficiency was observed from silicon pn diodes prepared by boron implantation. The temperature dependence of the EL and PL of the pn diode shows a different behavior compared to the PL from bulk silicon substrates. Two asymmetric EL bands from trap bands below the free exciton emission band are observed at around 1.065 and 0.92-0.96 eV at low temperature in the silicon pn diode. The intensity of the two bands increases strongly with increasing boron concentration. A blue shift of the two bands with increasing the injection current was observed which is similar to EL in deta-doped semiconductors. The temperature dependence of the EL intensity from the different bands shows that the thermal emission of carriers from these traps is responsible for a strong increase of the band edge radiative emission of silicon. These results are consistent with a rate equation model based on the emission, trapping and recombination processes for a system containing free excitons and bound excitons. Our results give an alternative explanation to the strong increase of the EL efficiency in boron implanted silicon pn diodes .
 W.L. Ng et al., Nature 410, 192 (2001).
Keywords: electroluminescence; bound excitons; silicon; p-n diode
Frühjahrstagung des Arbeitskreises Festkörperphysik (AKF) der DPG HL 24.5 Dresden 24.- 28.03.2003.