Direct evidence of self-aligned Si nanocrystals formed by ion irradiation of Si/SiO2 interfaces
Direct evidence of self-aligned Si nanocrystals formed by ion irradiation of Si/SiO2 interfaces
Röntzsch, L.; Heinig, K.-H.; Schmidt, B.; Mücklich, A.; Möller, W.; Thomas, J.; Gemming, T.
Energy-filtered transmission electron microscopy proves di-rectly, that ion irradiation and post-irradiation annealing of a Si/SiO2 interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and size of the Si nanocrystals are in agreement with predictive atomistic computer simulations.
Keywords: Ion Irradiation; Phase Separation Si-SiO2 Interface; Si Nanocluster; Non-volatile Memory
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Physica Status Solidi (A) 202(2005)15, R170-R172
DOI: 10.1002/pssa.200521399
Cited 13 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-7731
Publ.-Id: 7731