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Spin-based nanoelectronic devices for mobile Information-Communication Technology

Deac, A. M.

Abstract
Perhaps the best known (or most successfully implemented) spin-based device is the hard-disk read-head. Indeed, the discovery of giant magnetoresistance enabled a paradigm shift in the miniaturization of magnetic storage technology, which was disruptive enough to earn its discoverers a Nobel price [1]. More recently, it has been demonstrated that non-volatile, ultra-fast spin-based memory bit devices can be designed so that they can scale down to more than one fifth of all other available technologies, including SRAM [2]. Other spin-based nanoelectronics devices currently under consideration - which will be discussed here - range from tuneable radio-frequency oscillators to magnetic field sensors, negative resistors, amplifiers, write heads and random number generators. [1] http://www.nobelprize.org/nobel_prizes/physics/laureates/2007/index.html [2] http://www.avalanche-technology.com/technology/ram

Biography
Alina Deac is currently the leader of the Spintronics Group at the Helmholtz-Zentrum Dresden - Rossendorf in Dresden, Germany. During the last 15 years, her research has been focused on spin-torque induced phenomena and their potential applications for mobile ICT devices. After obtaining her PhD in Physics at the Universite Joseph Fourier Grenoble, France in 2005, she pursued her career by working with top-notch institutions in Japan, US and Switzerland. She is a Senior Member of the IEEE Magnetics Society and an expert in the field of spintronics for the EU.

Keywords: spintronics; magnetic storage; information-communication technology

Related publications

  • Invited lecture (Conferences)
    SEMICON Europa 2015, 06.-08.10.2015, Dresden, Germany

Permalink: https://www.hzdr.de/publications/Publ-22317
Publ.-Id: 22317