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On the production of fullerene-like carbon nitride thin films by Ion Beam Assisted Deposition

Gago, R.; Kolitsch, A.; Möller, W.

This communication addresses the production of carbon nitride thin films with fullerene-like structure (f-CNx), i.e. bent and cross-linked graphitic basal planes [1]. Normally, f-CNx thin films are produced by Magnetron Sputtering and a key parameter appears to be the use of low-energy ion bombardment (<100 eV) during the growth process [2]. The aim of the investigations is to obtain f-CNx by means of Ion Beam Assisted Deposition (IBAD), which will provide a better understanding of the growth process since the role of neutrals and ions can be studied separately. In order to reproduce the growth conditions of f-CNx, an IBAD device has been re-constructed, incorporating an End-Hall ion source to operate in the low-energy range (50-150 eV). Preliminary results on the deposition of our films will be shown.
1. H. Sjöstrom, et al. Phys. Rev. Lett. 75 (1995) 1336.
2. L.Hultman, et al. Phys. Lett. 87 (2001) 225503.

  • Poster
    MRS Fall Meeting, 2-6 December 2002, Boston (USA)

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Publ.-Id: 5174