Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication

Investigation of the damage induced by 200 keV Ge+ ion implantation in 6H-SiC

Pacaud, Y.; Skorupa, W.; Perez-Rodriguez, A.; Brauer, G.; Stoemenos, J.; Barklie, R.

Permalink: https://www.hzdr.de/publications/Publ-890
Publ.-Id: 890