Department Ion Beam Center
The department Ion Beam Center focuses on the modification and analysis of solid surfaces by the use of ions in a wide energy range (eV to MeV). The department ensures the operation and the methodical development of a variety of ion beam and plasma techniques. The use of facilities for materials research occures in close collaboration with other institute departmentals. In addition to ion beam analysis, for a comprehensive characterization of materials electron microscopy (TEM, SEM, cross-beam systems), and X-ray-based analysis techniques are used for structural elucidation. R&D work using ion-induced effects or structures for opto-and nanoelectronic devices can be performed in a class 100 clean room.
The Ion Beam Center is an internationally leading center of competence for the application of ion beams in materials research. Plasma and ion sources generate ions of all species at energies between eV and 60 MeV.Head: Dr. Stefan Facsko
The ion induced nanostructure research group studies processes during the interaction of low energy (10 eV – 50 keV) ions of various charge states with materials. The focus lies on the controlled modification and nano-patterning of surfaces. Such modifications can be material removal through sputtering of surface atoms but also near surface ion beam mixing, ion beam induced defect engineering, or implantation of guest atoms. To achieve this goal we employ low energy broad beam irradiation, highly charged ion beams (HCI), focused liquid metal alloy ion beams (LMAIS FIB) as well as helium ion microscopy (HIM).
Group leaderDr. G. Hlawacek
The main goal of our work at the Institute of Ion Beam Physics and Materials Research is the development of novel (opto-)electronic devices based on modification and structuring of both cutting-edge and traditional materials. Through ion beam irradiation facilities at the Ion Beam Center (IBC) various optical/electronic and physical properties of almost any material can be precisely controlled. Final integration into electronic circuits for device testing is achieved by processing in a class 100 (ISO 5) cleanroom using standard semiconductor industry processes and is suitable to pattern sub-µm devices. Electron beam lithography process are run in close collaboration with the nanostructure group at the IBC, where devices as small as 10 nm can be fabricated. Materials currently under investigation range from organic molecules (e.g. conducting Polymers), 2-dimensional semiconductors (e.g. MoS2 and black phosphorus), transition metal magnets and their derivatives (e.g. NiFe, FeAl, Co/Pt) all the way through to traditional semiconductor materials such as Si, Ge, or III-V semiconductors.
Group LeaderDr. A. Erbe
The group is focused on multi-scale atomistic simulations of materials with particular focus on nanosystems. Specifically, we carry out calculations of the mechanical, magnetic and opto-electonic properties of materials at various levels of sophistication ranging from time-dependent density functional theory to empirical potential molecular dynamics and kinetic Monte-Carlo methods. We also study effects of ion and electron irradiation on solids.
Group leaderDr. A. Krasheninnikov