Contact

Dr. Matthias Posselt

m.posseltAthzdr.de
Phone: +49 351 260 3279
+49 351 260 2199

Defects and dopants in semiconductor materials (Si, Ge, SiC)

Ion implantation, defect formation and evolution


Structure, energetics, migration, and recombination of defects 


Implantation and doping


Contact

Dr. Matthias Posselt

m.posseltAthzdr.de
Phone: +49 351 260 3279
+49 351 260 2199


Links

Crystal-TRIM