The Ion Beam Center at HZDR has decades of experience in the application of ion beams for the modification and analysis of solid materials and surfaces.

As a leading European center for ion beam applications, the Ion Beam Center provides scientific and technical expertise to partners from research institutions and industry. External users are welcome to access our state-of-the-art accelerator and ion implantation facilities for ion implantation, ion beam modification, ion beam analysis, and accelerator mass spectrometry. Our comprehensive range of ion beam techniques supports both fundamental and interdisciplinary research as well as the development of innovative materials and technologies.

• Simulation of ion beam interaction with materials
• Fabrication of wear protection layers on metallic materials or alloys
• Advanced ion beam technologies (high energy ion implantation, focsed ion beam) for microelectronic applications
• Application of high energy ion implantation for power devices and laser structures
• Doping of semiconductors, particularly wide bandgap semiconductors
• Surface analysis of solid state materials with high energy ion beams
• Development and fabrication of sensors and detectors for charged particle spectroscopy

• Consultation and problem evaluation for ion beam applications
• Process development for ion beam treatment of different materials (metals, ceramics, semiconductors)
• Preparation and treatment of material samples, tools or complex parts of devices
• Service at the fields of ion implantation and ion beam analysis
• Ion implantation into semiconductor materials for applications in microsytem technique and microelectronics
• Preparation / fabrication of semiconductors or silicon radiation sensors under clean room conditions(area:: 300 m2; RR-class: 100)

• Improvement of wear resistance of austenic stainless steels using plasma immersion ion implantation
• High energy ion implantation for power devices
• Micro- and nanoengineering with focused ion beams
• Non-destructive quantitative hydrogen analysis in materials
• Non-destructive ion beam analysis of art objects
• Doping of wide-bandgap-semiconductors (SiC, diamond)
• Nuclear microprobe for ion beam analysis with high spatial resolution
• Synchrotron radiation analysis of materials at the ROBL Beamline in Grenoble