Semiconductor nanowires can be tailored over large energy ranges
| Title | Semiconductor nanowires can be tailored over large energy ranges |
|---|---|
| Description | GaAs nanowire with sheath of indium aluminum arsenide, X-ray cross section |
| Copyright | HZDR/R.Hübner |
| Picture Id | 58663 |
| Date | 24.06.2019 |
| Downloads: | |
| 1561 x 1400 px | Show | Download TIFF 8,3 MB |
| 1561 x 1400 px | Show | Download JPEG 1,1 MB |
| 140 x 125 px | Show | Download JPEG 15 kB |
| 200 x 179 px | Show | Download JPEG 29 kB |
| 400 x 358 px | Show | Download JPEG 111 kB |
