The incorporation of hydrogen into gallium oxide can be controlled in such a way that specific areas with n- and p-conductors are created.
Title | The incorporation of hydrogen into gallium oxide can be controlled in such a way that specific areas with n- and p-conductors are created. |
---|---|
Description | The semiconductor gallium oxide is thought to be a promising candidate for potential use in power electronics. So far, however, a number of obstacles have stood in its path, especially how to specifically influence the material’s electrical conductivity. In a study published in the journal Scientific Reports, a team of researchers involving scientists from the Helmholtz Zentrum Dresden-Rossendorf (HZDR) have now demonstrated how the conductivity of gallium oxide in its most stable form (β-Ga2O3) can be regulated via the controlled incorporation of hydrogen in the semiconductor’s crystal lattice. |
Copyright | HZDR/Juniks |
Picture Id | 62171 |
Date | 10.11.2020 |
Downloads: | |
2000 x 2000 px | Show | Download JPEG 2 MB |
140 x 140 px | Show | Download JPEG 14 kB |
200 x 200 px | Show | Download JPEG 24 kB |
400 x 400 px | Show | Download JPEG 52 kB |