The incorporation of hydrogen into gallium oxide can be controlled in such a way that specific areas with n- and p-conductors are created.

Title The incorporation of hydrogen into gallium oxide can be controlled in such a way that specific areas with n- and p-conductors are created.
Description The semiconductor gallium oxide is thought to be a promising candidate for potential use in power electronics. So far, however, a number of obstacles have stood in its path, especially how to specifically influence the material’s electrical conductivity. In a study published in the journal Scientific Reports, a team of researchers involving scientists from the Helmholtz Zentrum Dresden-Rossendorf (HZDR) have now demonstrated how the conductivity of gallium oxide in its most stable form (β-Ga2O3) can be regulated via the controlled incorporation of hydrogen in the semiconductor’s crystal lattice.
Copyright HZDR/Juniks
Picture Id 62171
Date 10.11.2020
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