The Rossendorf Ion Beam Analysis Laboratory - OverviewAt the Institute for Ion Beam Physics and Materials Research three MeV accelerators are used for ion beam analysis with state-of-the-art experimental setups.
The general layout shows the arrangment of the accelerators, beam lines and target positions in the laboratory.
2 MV van de Graaff accelerator
The single stage 2 MV van de Graaff accelerator provides p, d, and He ions and is mostly used for RBS/channeling, but also for NRA and He-ERDA.
|Built by: Transformatoren- und Röntgenwerk Dresden/Germany
Start of operation: 1963
Terminal voltage: 0.3 - 1.7 MV
Beam current: 0.01 - 1.0 µA
Kinds of ions: 1H, 2H, 4He
Ion source: rf ion source
3 MV TandetronThe 3 MV Tandetron is used both as high current MeV implanter and for various ion beam analytical work. A sputter ion source provides a wide variety of negative ions and the RF source with a lithium vapour charge exchange cell delivers a He beam with currents up to a few hundred nA, sufficient for RBS measurements. Three beamlines with dedicated experimental facilities follow a first switching magnet. A forth beamline is directed to an adjacent hall, where a second switching magnet distributes the beam to additional experimental facilities.
|Built by: High Voltage Engineering Europa Amersfoort/ Netherlands
Start of operation: 1993
Terminal voltage: 0.1 - 3.3 MV
Beam current: 0.001 - 200 µA
Kinds of ions: nearly all kinds of ions including He ions
Ion sources: Cs sputter ion source IONEX 860-C.
5 MV Tandem acceleratorThe vertical 5 MV Tandem accelerator is mainly employed for ion beam analysis and to a lesser extend for high energy ion implantation. Three ion sources, a sputter source, a duoplasmatron and a He ion source are available, but provisions are made for the permanent installation of two other types of sources. Ten beam-lines in two spacious experimental halls offer wide possibilities for the installation of various experiments. Seven of them are eqipped with facilities for material research, two are used for ion implantation or irradiation.
|Built by: Efremov Institute NIIEFA St. Petersburg/ Russia
Start of operation: 1972
Terminal voltage: 0.8 - 4.5 MV
Beam current: 0.001 - 10 µA
Kinds of ions: nearly all kinds of ions except noble gas ions,
mainly 1H, 2H, Li, C, 14N, 15N, O, Cl, Br
Ion sources: Cs sputter ion source MISS-483, off-axis duoplasmatron EKTON-4
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