The implantation chamber at the 40 kV ion implanter

Der 40 kV Ionenimplanter im Ionenstrahlzentrum Substrates: Wafers or smaller samples
Substrate size: 0.3x0.3 cm2 to 6" wafers
Implantation area: max. 150 x 150 mm
Implantation angle: 0° and 7°, other angles upon request
Substrate temperature: Nitrogen cooling for 2" wafers,
up to 800 °C for 1x1 cm2 samples
Fluence range: 1e12 to 1e17 cm-2 (higher fluences on request)

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Dr. Roman Böttger
HZDR Innovation GmbH
Ion Technology
Phone: +49 351 260 2873