AIM - Center for Application of Ion Beams in Materials Research


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Ion induced nanostructures


List of feasible experiments

 The Institute of Ion Beam Physics and Materials Research is devoted to the application of ion beams for the modification and the analysis of near-surface layers of solids. For this purposes a broad spectrum of ion beam apparatus in the energy range from 10 eV up to several MeV, analyzing and preparation methods are available:


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Thin film deposition by ion beam or plasma assisted deposition

  • IBAD with low energy broad beam ion sources and electron beam evaporators
  • IBAD in combination with 20...200 keV high current ion implantation (interface engineering, ion beam mixing, postimplantation)
  • MF pulsed dual magnetron deposition



MF pulsed Dual Magnetron sputter deposition chamber

500kV ion implanter


Beamline ion implantation of materials

  • 20 to 200 keV ion implantation with electrostatic scan, current limit <0.5 mA, standard target station or high temperature target chamber (1100 °C)
  • 20 to 200 keV high current ion implantation with magnetic scan, current limit <10 mA, target station with possibilities to move large and heavy samples
  • 500 keV ion implantation with different ion sources and beamlines, target temperature 100 K to 900 K
  • 200eV to 40 keV low energy ion implantation, current limit <5 mA, UHV wafer station

Plasma source ion implantation (PSII)

  • different plasma sources, pulse generators (< 100 kV) and chambers (< 200 l) for ion implantation

Application of high energy (MeV) accelerators

  • ERDA using a Bragg ionization chamber, a DE-E semiconductor telescope and a time of flight detector
  • external p+ beam for PIXE, PIGE and p+ backscattering experiments
  • nuclear reaction analysis (NRA), especially hydrogen profiling
  • low energy (< 3 keV) ion implantation combined with in-situ ion beam analysis
  • high energy ion implantation (3MV Tandetron), 15x15cm² scan field, target temperature 80 K to 900 K
  • RBS beamline
  • nuclear microprobe, minimum spot size 1-2 µm, for PIXE, RBS, ERDA, NRA
  • equipment for accelerator mass spectrometry (AMS)
  • RBS and channeling experiments with a 2 MV Van de Graaff beamline
  • beamline in an UHV chamber for studies of sheet growth effects, also connected to an ECR source for highly charged ions (e.g. Ar10+ decelerated to about 100 eV)
5 MeV Tandem accelerator control center
3 MeV Tandetron
Implantation beam line of the Tandetron

Experimental stations for the simultaneous use of two ion beams

  • double-implantation experiments or in-situ ion beam analysis during ion implantation combining the beams from 3 MV Tandetron and 500 kV implanter (chamber with goniometer and possibility for cooling and heating)
  • ion implantation (500 kV) in a chamber with a Browne-Buechner magnet combined with the 3 MV Tandetron beamline for in-situ RBS with very high depth resolution as well as for in-situ dignostics by nuclear reaction analysis (NRA)

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Use of focused ion beams

  • Ion implantation (< 50 keV) experiments with a focused ion beam apparatus (>100 nm spot size), liquid metal ion source, computer controlled writing beam, ExB mass filter for alloy sources


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Managing Director: Prof. Dr. Wolfhard Möller
Management: Prof. Dr. Andreas Kolitsch
Forschungszentrum Dresden-Rossendorf e.V.
Institute of Ion Beam Physics and Materials Research
P.O.Box 51 01 19, D-01314 Dresden, Germany
Tel.: +49 (0)351-260 3348, Fax: +49 (0)351-260 2703