Conclusions and References

Conclusions

  • Strong blue-violet PL from Si-, Ge- and Sn-implanted SiO2 layers.
  • Strong EL from Ge-implanted SiO2 layers with a power efficiency up to 5x10-4.
  • The blue-violet PL is caused by a T1->S1 transition of a molecular luminescence center.
  • The differences of between Si, Ge and Sn can be well explained by the Heavy-atom-effect.
  • The EL and PL are caused by one and the same luminescence center.
  • The EL spectrum is independent on injection current.
  • The EL intensity increases linearly with the injection current.
  • The electrons will be injected via Fowler Nordheim tunneling.
  • Ge-implanted SiO2 layers held great promise for optoelectronic applications.

References

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  • L. Rebohle, J. von Borany, R. Grötzschel, A. Markwitz, B. Schmidt, I.E. Tyschenko, W. Skorupa, H. Fröb, K. Leo, phys. stat. sol. (a) 165 (1998) 31
  • A. Markwitz, L. Rebohle, H. Hofmeister, W. Skorupa, Nucl. Instr. Meth. Phys. Res. B 147 (1999) 361
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  • L. Rebohle, J. von Borany, W. Skorupa, I.E. Tyschenko, H. Fröb, J. Luminesc. 80 (1999) 275
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