Reactive Ion Etching (RIE) Facility SI 591 (SENTECH Instruments GmbH)
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Typ
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Single chamber parallel plate reactor
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Specification
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Process chamber | Inner diameter 300 mm, 270 mm high |
| Electrodes |
Upper electrode with gas shower, 250 mm diameter
Substrate electrode for up to 200 mm wafers with three lifting pins, cooled or heated in the temperature range -30 T(°C) 80 |
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| RF-supply | Power 600 W, frequency 13.56 MHz | |
| Load lock | Automatic single wafer pneumatic vacuum load lock | |
| Gas flow | 4 channels (SF6, CF4, O2, Ar with MFC controlling) | |
| Operating mode | Automatical mode with SPS controlling coupled to a PC, SENTECH software using Windows 3.1 | |
| Current applications | Isotropic etching of SiC using SF6+O2 or CF4+O2, etch rate 40 nm/min, usual etch depth up to 200 nm | |
| Anisotropic etching of Si using SF6+O2 and thermally grown SiO2 as etch mask, etch rate 1 µm/min, etch depth of trenchs 20 µm, selectivity RSi/RSiO2 > 130, anisotropy 0.97. | ||
