Rapid Thermal Processes

Thermal processes are used for thermal oxydation of silicon, annealing of radiation damage after ion beam traetment and for electrical activation of dopants as well as for drive-in-diffusion after ion implantation. For this purpose the following facilities are available:
 
 

 
 

Rapid Thermal Processing Facility ADDAX XM-A4 (ADDAX)
 

System
 
Two-wall and DI-water cooled quarz chamber
Wafer diameter
 
max. 100 mm
Wafer quantity
 
Single wafer load lock system
 
 
 
 
Processes
 
Rapid thermal annealing of radiation defects after ion implantation with minimized broadening and in-diffusion of implanted profiles. 

Rapid thermal oxydation with dox < 50 nm , nitridation and silicide forming.

Gasses: N2, Ar, O2 all of 5.0 purity 

Temperature range: (474...1200) °C 

Processing time: (0.5...5) min