Defects and dopants in semiconductor materials (Si, Ge, SiC)

Ion implantation, defect formation and evolution

• introduction (pdf, 43kB)

• ion implantation: range profiles and channeling effects in Si, Ge, and SiC (237kB)

• ion-beam-induced defect evolution in Ge (pdf, 217kB)

• ion-beam-induced defect formation in Si (pdf, 483kB)

Structure, energetics, migration, and recombination of defects 

• interstitial contribution to self-diffusion in Si (with movies), (pdf, 6082kB)

• di- and tri-interstitials in Si (with movie) (pdf, 3934kB)

• elementary defects in SiC (pdf, 225kB)

• antisite pair recombination in SiC (pdf, 452kB)

Implantation and doping

• Doping of Ge by ion implantation and subsequent annealing (pdf, 217kB)