Kontakt
Dr. Ahmad Echresh
Reinraummanager
Postdoktorand
Nanofabrikation und Analyse
a.echresh
hzdr.de
Tel.: +49 351 260 3893
Dr. Ciaran Fowley
Leiter Nanofabrikation und Analyse
c.fowleyhzdr.de
Tel.: +49 351 260 3253
Thermal Processing
Thermal processes are used for thermal oxidation of silicon, annealing of radiation damage after ion beam treatment and for electrical activation of dopants as well as for drive-in-diffusion after ion implantation. For this purpose the following facilities are available.
Horizontal Furnace with three quartz tubes, (INOTHERM)
| Operating temperature | 300...1150 °C | |
| Process gases |
O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2 |
|
| Wafer diameter | max. 150 mm | |
| Wafer quantity | max. 25 | |
| Processes |
Dry oxidation |
Growth of high quality gate oxides, dox = (10...250) nm Gases: dry O2, dry O2+3% HCl Temperature range: (900...1100) °C |
|
Wet oxidation |
Growth of thick field oxides, dox= (200...1500) nm |
|
| Annealing | Annealing of radiation defects after ion implantation Drive-in-diffusion after implantation Metal contact forming Gases: N2, Ar, N2+5%H2, Ar+7% H2 Temperature range: (300...1150) °C |
|
Horizontal Furnace with three quartz tubes, DA62 (ELEKTROMAT)
| Operating temperature | 300...1150 °C | |
| Process gases |
O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2 |
|
| Wafer diameter | max. 100 mm | |
| Wafer quantity | max. 50 | |
| Processes |
Dry oxidation |
Growth of high quality gate oxides, dox = (10...250) nm Gases: dry O2, dry O2+3% HCl Temperature range: (900...1100) °C |
|
Wet oxidation |
Growth of thick field oxides, dox= (200...1500) nm |
|
| Annealing | Annealing of radiation defects after ion implantation Drive-in-diffusion after implantation Metal contact forming Gases: N2, Ar, N2+5%H2, Ar+7% H2 Temperature range: (300...1100) °C |
|
Rapid Thermal Processing Facility Allwin AccuThermo AW 610
| System | Two-wall and DI-water cooled quarz chamber |
| Wafer diameter | max. 100 mm |
| Wafer quantity | Single wafer load lock system |
| Processes | Rapid thermal annealingof radiation defects after ion implantation with minimized broadening and in-diffusion of implanted profiles. Rapid thermal oxydation with dox < 20 nm , nitridation and silicide forming. |
|
Gases: N2, Ar, O2 , all of 5.0 purity |
