Highly sensitive AFM cantilever arrays with integrated piezoresistive deflection sensing elements require ultrashallow (USJ) p-type (boron) doped pn-junctions. Low resistance of USJs is foreseen as the most difficult goal to achieve.
For the fabrication of shallow pn-junctions (piezoresistors) two techniques are to be evaluated and optimized:
Based on theoretically predictions an increased AFM cantilever deflection sensitivity of piezoresistors can be expected for pn-junctions with xj < 50 nm.
Additionally, the ion beam processing of AFM cantilever arrays includes the fabrication of highly boron doped heating resistor elements foreseen as cantilever deflection actuators as weel as the fabrication of highly boron doped interconnect lines.
More details can be found at PRONANO - Project summary: Technology for the Production of Massively Parallel Intelligent Cantilever Probe Platforms for Nanoscale Analysis and Synthesis (Proposal/Contract no.: IP 515739-2 PRONANO, http://www.pronano.org).