Defect formation and dynamic annealing during FIB implantation
DFG – project Te 250 / 1-1 06/1996 – 02/2000 Dr. Stephan Hausmann
Applying FIB implantation the ion current density (or the ion flux) on the target may be varied by six orders of magnitude by varying the beam movement velocity. So a quasi-stationary beam can have a density in the focus of about 10 A/cm2 whereas a fast scanning beam (pixel dwell time < 1µs) only reach a density in the order of µA/cm2. In collaboration with the theory group of our Institute the defect formation and dynamic annealing as a function of the implantation temperature were studied on Si, Ge as well as on SiC.
|Relative disorder in Ge in dependence on the Ga-FIB ion beam density and the implantation temperature, obtained by channeling RBS. The black and red curves correspond to implantation at room temperature, the green and blue ones to implantation at 250 °C. "Single scan" represents implantation with a flux of 1019 cm−2 s−1 and "PDT=2µs" 1012 cm−2 s−1, respectively.|