Contact

Porträt Dr. Bischoff, Lothar; FWIZ-N

Dr. Lothar Bischoff

l.bischoffAthzdr.de
Phone: +49 351 260 2866
+49 351 260 2963

Publications - Focused Ion Beams (FIB)

Diploma theses

PhD theses

Patents

Projects

Publications

2019

  • W. Pilz, N. Klingner, L. Bischoff, P. Mazarov, and S. Bauerdick (2019) Lithium Ion Beams from Liquid Metal Alloy Ion Sources, J. Vac. Sci. Technol. B 37 (2019) 021802-1 – 021802-4.

2018

  • J. Gierak, P. Mazarov, L. Bruchhaus, R. Jede, and L. Bischoff, Review of Electro-Hydro-Dynamical ion sources and their applications to Focused Ion Beam technology,  J. Vac. Sci. Technol. B 36 (2018) 06J101-1 - 6.
     G. S. Cañón Bermúdez, H. Fuchs, L. Bischoff,  J. Fassbender, and D. Makarov, E-skin compass for artificial magnetoception and interactive electronics,  Nature Electronics 1,  (2018) 589 - 595.
  • R. Ferhati, S. Amirthapandian, M. Fritzsche, L. Bischoff, and W. Bolse, Swift Heavy Ion shaping of oxide-structures at (sub)-micrometer scales, Nucl. Instr. Methods B 435 (2018) 93 – 100. 
  • X. Xu, T. Prüfer, D. Wolf, L. Bischoff, R. Hübner, K.-H. Heinig, H.-J. Engelmann, W. Möller, S. Facsko, J. von Borany, and G. Hlawacek, Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix usingion beam mixing, Beilstein Journal of Nanotechnology 9 (2018) 2883 – 2892.
  • G. S. Cañón Bermúdez, D. D. Karnaushenko, D. Karnaushenko, A. Lebanov, L. Bischoff, M. Kaltenbrunner, J.Fassbender, O. G. Schmidt, and D. Makarov, Magnetosensitive e-skins with directional perception for augmented reality, Science Advances 4 (2018) eaao2623.

2017

  • L. Bruchhaus, P. Mazarov, L. Bischoff, J. Gierak, A.D. Wieck, and H. Hövel, Comparison of Technologies for Nano Device Prototyping with a Special Focus on Ion Beams – A Review, Appl. Phys. Rev. 4 (2017) 011302-1  -  011302-52.
  • M. Langer, F. Röder, R. A. Gallardo, T. Schneider, S. Stienen, C. Gatel, R. Hübner, L. Bischoff, K. Lenz, J. Lindner, P. Landeros, and J. Fassbender, The role of the internal demagnetizing field for the dynamics of a magnonic crystal, Phys. Rev. B 95 (2017)18, 184405-1 - 184405-10.
  • M. Berova, M. Sandulov, T. Tsvetkova, S. Kitova, L. Bischoff, and R. Böttger, Ion beam induced surface modification of ta-C thin films, Acta Physica Polonica A 132 (2) (2017) 299 - 301.
  • B.N. Dev, N. Banu, J. Fassbender, J. Grenzer, N. Schell, L. Bischoff, R. Grötzschel, and J. McCord, Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magneticnonmagnetic multistrip patterning by focused ion beam, Indian Journal of Physics 91 (10) (2017) 1167 – 1172.
  • M. Radek, B. Liedke, B. Schmidt, M. Voelskow, L.Bischoff, J. L. Hansen, A. N. Larsen, D. Bougeard, R. Böttger, S. Prucnal, M. Posselt, and H. Bracht, Ion-beam-induced atomic mixing in Ge, Si, and SiGe, studied by means of isotope multilayer structures, Materials - Special Issue Ion Beam Analysis, Modification, and Irradiation of Materials, Materials 10 (2017) 813, 1 – 32.
  • W. Pilz, P. Laufer, M. Tajmar, R. Böttger, and L. Bischoff, Polyatomic Ions from Liquid Metal Ion Source driven High Current Ion Implanter, Review of Scientific Instruments 88 (2017) 123302.

2016

  • M. Berova, M. Sandulov, T. Tsvetkova, L. Bischoff, R. Boettger, and M. Abrashev, Vibrational Spectroscopy of Ga+ Ion Implanted ta-C Films, J. Physics: Conference Series 682 (2016) 012020.
  • L. Bischoff, P. Mazarov, L. Bruchhaus, and J. Gierak, Liquid Metal Alloy Ion Sources - An Alternative for Focused Ion Beam Technology, Appl. Phys. Rev. 3 (2016) 021101-1 – 021101-30.
  • T. Tsvetkova, M. Berova, M. Sandulov, S. Kitova, R. Böttger, and L. Bischoff, Focused ion beam optical patterning of ta-C films, Surface and Coatings Technology 306 (2016) 341 - 345.
  • M. Berova, M. Sandulov, T. Tsvetkova, R. Böttger, and L. Bischoff, Structural modification of Ga+ and N+ ion implanted ta-C films, J. Physics: Conference Series 700 (2016) 012035.

2015

  • M. Schmidt, J. König, L. Bischoff, W. Pilz, and G. Zschornack, Surface and material analytics based on Dresden-EBIS platform technology, AIP Conf. Proc. 1640 (2015) 88 – 93.
  • F. Röder, G. Hlawacek, S. Wintz, R. Hübner, L. Bischoff, H. Lichte, K. Potzger, J. Lindner, J. Fassbender, and R. Bali, Direct Depth- and Lateral- Imaging of Nanoscale Magnets Generated by Ion Impact,  Scientific Reports 5 (2015) 16786-1 – 13.
  • B. N. Dev, N. Banu, J. Fassbender, J. Grenzer, N. Schell, L. Bischoff, R. Groetzschel, and J. McCord, Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magneticnonmagnetic multistrip patterning by focused ion beam, arXiv:1507.03748  (2015).

2014

  • P. Philipp, L. Bischoff, U. Treske, B. Schmidt, J. Fiedler, R. Hübner, F. Klein, A. Koitzsch, and T. Mühl, The origin of conductivity in ion irradiated diamond-like carbon – Phase transformation and ordering by transient heat injection Carbon 80 (2014) 677 – 690.
  • L. Bischoff, R. Böttger, K.-H. Heinig, S. Facsko, and W. Pilz, Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions, Applied Surface Science 310 (2014) 154 – 157.
  • K. Buchta, M. Lewandowski, L. Bischoff, K. Synoradzki, M. Błaszyk, T. Toliński, and T. Luciński,Magnetization reversal in Co zigzag nanocolumns grown by glancing angle deposition, Thin Solid Films 568 (2014) 13 – 18.

2013

  • L. Bischoff, R. Böttger, P. Philipp and B. Schmidt, Nanostructures by mass-separated FIB, in FIB Nanostructures (Lecture Notes in Nanoscale Science and Technology, vol. 20), ed. Z. Wang, Peking, Berlin, Springer (2013) 465-525.
  • R. Böttger, K.-H. Heinig, L. Bischoff, B. Liedke and S. Facsko, From holes to sponge at irradiated Ge surfaces with increasing ion energy - an effect of defect kinetics?, Appl. Phys. A (Rap. Commun.) 113 (2013) 53-59.
  • R. Böttger, K.-H. Heinig, L. Bischoff, B. Liedke, R. Hübner and W. Pilz, Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 Ions, Phys. Stat. Solidi RRL 7 (2013) 501-505.
  • R. Böttger, A. Keller, L. Bischoff, and S. Facsko, Mapping the local elastic properties of nanostructured germanium surfaces: from nanoporous sponges to self-organized nanodots, Nanotechnology 24 (2013) 115702
  • T. Tsvetkova, C. D. Wright, P. Hosseini, L. Bischoff and J. Zuk, Implantation temperature effects on the optical pattern fabrication in a-SiC:H films by Ga+ focused ion beam implants, Acta Phys. Pol. A 123 (2013) 952-955
  • T. Tsvetkova, C. D. Wright, S. Kitova, L. Bischoff and J. Zuk, Effects of implantation temperature and thermal annealing on the Ga+ ion beam induced optical contrast formation in a-SiC:H, Nucl. Instr. Meth. Phys. Res. B 307 (2013) 71–76

2012

  • A. Thorn, L. Bischoff, W. Pilz, E. Ritter, F. Ullmann and G. Zschornack, Liquid Metal Ion Source based Metal Ion Injection into an Electron Beam Ion Source, Rev. Sci. Instr. 83 (2012) 02A511.
  • T. Tsvetkova, C. D. Wright, M. Craciun, L. Bischoff, O. Angelov and D. Dimova-Malinovska, Thermal effects on the Ga+ ion beam induced structural modification of a-SiC:H, J. Phys.: Conf. Ser. 398 (2012) 012048.
  • P. Phillipp and L. Bischoff, Investigation of conducting nanostructures on ta-C films made by FIB lithography, Nucl. Instr. and Meth. B 282 (2012) 121-124.
  • P. Phillipp and L. Bischoff, Investigations of nano structures on DLC films made by focused ion beam lithography, Diamond and Related Materials 23 (2012) 140-143.
  • P. Phillipp and L. Bischoff, Taming of Ga droplets on DLC layers – Size tuning and local arrangement with nm accuracy, Nanotechnology 23 (2012) 475304
  • R. Böttger, L. Bischoff, K.-H. Heinig, W. Pilz and B. Schmidt, From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts, J. Vac. Sci. Technol. B 30 (2012) 06FF12.
  • R. Böttger, L. Bischoff, S. Facsko, and B. Schmidt, Quantitative analysis of the order of Bi ion induced dot patterns on Ge, EPL 98 (2012) 16009.
  • L. Bischoff, K.-H. Heinig, B. Schmidt, S. Facsko and W. Pilz, Self-organization of Ge nanopattern under erosion with heavy Bi monomer and cluster ions, Nucl. Instr. Meth. in Phys. Res. B 722 (2012) 198-201.

2011

  • R. Böttger, L. Bischoff, B. Schmidt and M. Krause, Characterization of Si nanowires fabricated by Ga+ FIB implantation and subsequent selective wet etching, J. Micromech. Microeng. 21 (2011) 095025.
  • L. Bischoff, W. Pilz and B. Schmidt, Amorphous solid foam structures on germanium by heavy ion irradiation Applied Physics A 104 (2011) 1153 - 1158.

2010

  • L. Bischoff, W. Pilz, P. Mazarov and A. D. Wieck, Comparison of bismuth emitting liquid metal ion sources Applied Physics A 99 (2010) 145 -150.
  • S. Balabanov, T. Tsvetkova, E. Borisova, L. Avramov, L. Bischoff and J. Zuk, Optical properties of Si+ implanted PMMA, Journal of Physics: Conference Series 223 (2010) 012032.
  • T. Tsvetkova, S. Balabanov, L. Avramov, E. Borisova, I. Angelov and L. Bischoff, Photoluminescence of Si+ and C+ implanted polymers, Journal of Physics: Conference Series 223 (2010) 012033.
  • T. Tsvetkova, S. Balabanov, L. Bischoff, V. Krastev, P. Stefanov and I. Avramova, X-Ray Photoelectron Study of Si+ Ion Implanted Polymers, J. Phys.: Conference Series 253 (2010) 012070.
  • B. Pantchev, P. Danesh, B. Schmidt, D. Grambole and L. Bischoff Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures, J. Phys.: Conference Series 253 (2010) 012055.
  • A. Thorn, E. Ritter, A. Sokolov, G. Vorobjev, L. Bischoff, F. Herfurth, O. Kester, W. Pilz, D.B. Thorn, F. Ullmann and G. Zschornack, Optimization of the Electron Beam Properties of Dresden EBIT Devices for Charge Breeding, Journal of Instrumentation 5 (2010) C09006.

2009

  • L. Bischoff, B. Schmidt, H. Lange and D. Donzev, Nano-structures for sensors on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching, Nucl. Instr. Meth. in Phys. Res. B 267 (2009) 1372 – 1375.
  • P. Mazarov, A. D. Wieck, L. Bischoff and W. Pilz, Alloy Liquid Metal Ion Source for Carbon Focused Ion Beams, Journal of Vacuum Science and Technology B 27 (6) (2009) L47 – L49.
  • T. Tsvetkova, S. Balabanov, L. Avramov, E. Borisova, I. Angelov, S. Sinning and L. Bischoff, Photoluminescence enhancement in Si+ implanted PMMA, Vacuum 83 (2009) S252 – S255.
  • M. Baleva, G. Zlateva, T. Tsvetkova, S. Balabanov and L. Bischoff, Vibrational Spectra of Silicon Implanted Polymethyl-methacrylate (PMMA) and Poly-propylene (PP), Journal of Optoelectronics and Advanced Materials 11 (10) (2009) 1420 - 1423.
  • K. Kuepper, S. Wintz, J. Raabe, M. Buess, Ch. Akhmadaliev, L. Bischoff, C. Quitmann and J. Fassbender, Magnetization dynamics of Landau structures: tuning the response of mesoscopic magnetic objects using defects, Journal of Physics: Condensed Matter, 21 (43) (2009) 436003

2008

  • L. Bischoff, Application of mass-separated focused ion beams in nano-technology, Nucl. Instr. Meth. in Phys. Res. B 266 (2008) 1846 – 1851.
  • L. Bischoff and Ch. Akhmadaliev, An alloy liquid metal ion source for lithium, J. Phys. D: Appl. Phys. 41 (2008) 052001.
  • T. Tsvetkova, S. Balabanov, L. Avramov, E. Borisova and L. Bischoff, Si+ implantation induced Photoluminescence enhancement in PMMA, Przeglad Elektrotechniczny 84 (3) (2008) 72 – 74.
  • S. Balabanov, T. Tsvetkova, E. Borisova, L. Avramov and L. Bischoff, Dose dependence of visible range diffuse reflectivity for Si+ and C+ ion implanted polymers, Journal of Physics: Conference Series 113 (2008) 012038.
  • S. Balabanov, T. Tsvetkova, E. Borisova, L. Avramov and L. Bischoff, Spectral distribution of UV range diffuse reflectivity for Si+ ion implanted polymers, Journal of Physics: Conference Series 113 (2008) 012039

2007

  • K. Kuepper, L. Bischoff, Ch. Akhmadaliev, J. Fassbender, H. Stoll, K. Chou, A. Puzic, K. Fauth, D. Dolgos, G. Schütz, B. Waeyenberge, T. Tyliszczak, I. Neudecker, G. Wolterdorf, C. Back, Vortex dynamics in permalloy disks with artificially defects: Suppression of the gyrotropic mode, Appl. Phys. Lett. 90 (2007) 062506.
  • T. Ganetsos, A.W.R.Mair, G.L.R. Mair, L. Bischoff, Ch. Akhmadaliev and C.J. Aidinis, Can direct field-evaporation of doubly-charged ions and post-ionization from the singly-charged state co-exist?, Surface and Interface Analysis 39 (2007) 128 - 131.
  • L. Bischoff, Ch. Akhmadaliev and B. Schmidt, Defect induced nanowire growth by FIB implantation, Microelectronic Engineering 84 (2007) 1459 -1462.
  • L. Bischoff , W. Pilz, Th. Ganetsos, R. Forbes and Ch. Akhmadaliev, GaBi alloy liquid metal ion source for the production of ions of interest in microelectronics research, Ultramicroscopy 107 (2007) 865-868.
  • C. Schöndorfer, A. Lugstein, L. Bischoff, Y.J. Hyun, P. Pongratz and E. Bertagnolli, FIB induced growth of antimony nanowires, Microelectronic Engineering 84 (2007) 1440-1442.
  • S. Takahashi, P. Dawson, A.V. Zayats, L. Bischoff, O. Angelov, D. Dimova-Malinovska, T.Tsvetkova, and P.D. Townsend, Optical contrast in ion-implanted amorphous silicon carbide nanostructures, Journal of Physics D-Applied Physics 40 (23) (2007) 7492-7496.

2006

  • J. Meijer, T. Vogel, B. Burchard, I.W. Rangelow, L. Bischoff, J. Wrachtrup, M. Domhan, F. Jelezko, W. Schnitzler, S. Schulz, K. Singer and F. Schmidt-Kaler, Concept of deterministic single ion doping with sub-nm spatial resolution, Applied Physics A 83 (2006) 321-327.
  • L. Bischoff, B. Schmidt, Ch. Akhmadaliev and A. Mücklich, Investigation of FIB synthesised CoSi2 nanowire growth, Microelectronic Engineering,83 (2006) 800-803.
  • J. Fassbender, L. Bischoff, R. Mattheis, and P. Fischer, Magnetic domains and magnetization reversal of ion-induced magnetically patterned Ruderman-Kittel-Kasuya-Yoshida-coupled Ni81Fe19/Ru/Co90Fe10 films, J. Appl. Phys. 99, (2006) 08G301-1-3.
  • Ch. Akhmadaliev, L. Bischoff, and B. Schmidt, CoSi2 nanostructures by writing FIB ion beam synthesis, Materials Science and Engineering C 26 (2006) 818-821.
  • V. Luchnikov, M. Stamm, Ch. Akhmadaliev, L. Bischoff and B. Schmidt, Focused-ion-beam-assisted fabrication of polymer rolled-up microtubes, J. Micromech. Microeng. 16 (2006) 1602-1605.
  • M. Posselt, L. Bischoff, D. Grambole and F. Herrmann, Competition between damage build-up and dynamic annealing in ion implantation in Ge, Appl. Phys. Lett. 89 (2006) 151918.
  • C. Akhmadaliev, B. Schmidt and L. Bischoff, Defect induced formation of CoSi2 nanowires by FIB assisted ion beam synthesis, Appl. Phys. Lett. 89 (2006) 223129.
  • C. Akhmadaliev, B. Schmidt and L. Bischoff, Defect induced formation of CoSi2 nanowires by focused ion beam synthesis, Applied Physics Letters 89, 22312 (2006).
  • C. Akhmadaliev, L. Bischoff and B. Schmidt, CoSi2 nanostructures by writing FIB ion beam synthesis, Materials Science and EngineeringC 26, 818 (2006).

2005

  • L. Bischoff, G.L.R. Mair, Ch. Akhmadaliev, A.W.R. Mair and Th. Ganetsos, The post-ionisation of Pb ions from a molten Sn host field-ion emitter, Applied Physics A 80 (2005) 205-207.
  • L. Bischoff, Alloy liquid metal ion sources and their application in mass separated focused ion beams, Ultramicroscopy 103 (2005) 59-66.
  • G.L.R Mair, L. Bischoff, C.A.Londos, Th. Ganetsos, Ch. Akhmadaliev and C.J. Aidinis, An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter, Applied Physics A 81 (2005) 385-388.
  • J. Grenzer, L. Bischoff, and U. Pietsch, Grazing-Incidence Diffraction Strain Analysis of a Laterally patterned Si wafer treated by Focused Ge and Au Ion Beam Implantation, Physica Status Solidi. (a) 202 (2005) 1009-1016.
  • T. Tsvetkova, S .Takahashi, A. Zayats, P. Dawson, R. Turner, L. Bischoff, O. Angelov and D. Dimova Malinovska, Near-Field Optical Mapping of the Ion-Implanted Patterns Fabricated in Amorphous Silicon Carbide, Vacuum 79 (2005) 94-99.
  • T. Tsvetkova, S .Takahashi, A. Zayats, P. Dawson, R. Turner, L. Bischoff, O. Angelov and D. Dimova-Malinovska, Fabrication of Nano-Scale optical patterns in Amorphous Silicon Carbide with Focused Ion Beam Writing, Vacuum 79 (2005) 100-105.
  • A. Gorbunov, A.A. Levin, D.C. Meyer, L. Bischoff, D. Eckert, B. Köhler, M. Mertig, T. Weissbach, E. Wieser, and W. Pompe, Correlation of structural and physical properties of metastable Fe-Cr phases, Crystal Research and Technology 40 (1-2)(2005) 106-113.
  • K. Potzger, L. Bischoff, M. O. Liedke, B. Hillebrands, M. Rickart, P. P. Freitas, J. McCord, and J. Fassbender, Domain structure of magnetically micro-patterned PtMn/NiFe exchange bias bilayers, IEEE Transactions on Magnetics 41 (2005) 3610-3612.
  • B. Schmidt, S. Oswald and L. Bischoff, Etch rate retardation of Ga+ion beam irradiated silicon, Journal of The Electrochemical Society 152 (2005) G875-G879.
  • L. Bischoff, W. Pilz, Th. Ganetsos, Ch. Akhmadaliev, C. J. Aidinis and. C.A.Londos, On the temperature dependence of the mass spectra of AuGe and AuGeSi liquid metal alloy ion sources, Journal of Physics: Conference Series 10 (2005) 214-217.

2004

  • Ch. Akhmadaliev, L. Bischoff, G.L.R Mair, C.J. Aidinis and Th. Ganetsos, Investigation of emission instabilities of liquid metal alloy ion sources, Microelectronic Engineering 73-74 (2004) 120-125.
  • C.J. Aidinis, L. Bischoff, G.L.R Mair, C.A.Londos, Th. Ganetsos and Ch. Akhmadaliev, Study of a liquid metal field emitter for the production of Si ions, Microelectronic Engineering 73-74 (2004) 116 -119.
  • C.J. Aidinis, G.L.R. Mair, L. Bischoff, C.A.Londos, Ch.Akhmadaliev and Th. Ganetsos, The temperature dependence of the energy distribution of the beam emitted by a Au82Si18 liquid metal field-ion emitter, Nucl. Instruments Meth in Phys. Res. B 222(2004) 627-631.
  • L. Bischoff, Ch. Akhmadaliev, A.W.R. Mair, G.L.R. Mair, C.J. Aidinis and Th. Ganetsos, Investigation of a tin liquid metal ion source, Applied Physics A 79 (2004) 89- 92.
  • J. Seidel, S. Grafström, L.M. Eng, F.I. Baida, D. van Labeke, B. Guizal and L. Bischoff, Coupling between surface plasmon modes on metal films, Phys. Rev. B 69 (2004) 121405.
  • L. Bischoff, G.L.R Mair, C.J. Aidinis, C.A.Londos, Ch.Akhmadaliev, and Th. Ganetsos, A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms, Ultramicroscopy 100 (2004) 1-7.
  • G.L.R. Mair, Ch. Akhmadaliev, L. Bischoff, Th. Ganetsos, C.J. Aidinis and E.A. Anagnostakis,The effect of electrode geometry on the stability of a liquid metal ion emitter, Nucl. Instr. Meth. in Phys. Res. B 217 (2004) 347-351.
  • W. Leitenberger, H. Wendrock, L. Bischoff and T. Weitkamp, Pinhole interferometry with coherent hard x-rays, Journal of Synchrotron Radiation 11, Part 2 (2004) 190-197.
  • L. Bischoff, G. L. R. Mair, A. W. R. Mair, Th. Ganetsos and Ch.Akhmadaliev, The mass spectrum of a tin liquid metal ion source, Nucl. Instr. Meth. in Phys. Res. B 222 (2004) 622-626.

2003

  • L. Bischoff, J. Teichert, S. Kitova and T. Tsvetkova, Optical pattern formation in a-SiC:H films by Ga+ ion implantation, Vacuum 69 (2003) 73-77.
  • Ch. Akhmadaliev, L. Bischoff, J. Teichert, and K. Kazbekov, Ion acoustic microscopy based on IMSA-100 focused ion beam system, Vacuum, 69 (2003) 431-435.
  • W. Knapp, L. Bischoff and J. Teichert, Solidified Liquid Metal Ion Source - Formation of a Nanoemitter, Vacuum 69 (2003) 345-349.
  • Th. Ganetsos, G.L.R Mair and L. Bischoff, On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources, Ultramicroscopy 95 (2003) 171-181.
  • W. Leitenberger, H. Wendrock, L. Bischoff, T. Panzer, U. Pietsch, J. Grenzer and A. Pucher, Double pinhole diffraction of white synchrotron radiation, Physica B 336 (2003) 63-67.
  • Ch. Akhmadaliev, L. Bischoff, G.L.R. Mair, CJ. Aidinis, Th. Ganetsos and M. Anagnostakis, Temperatur dependence of emission frequency of a liquid metal anode, J. Phys. D: Applied Physics 36 (2003) L18-L20.
  • J. Seidel, S. Grafström, L. Eng, and L. Bischoff, Surface plasmon transmission across narrow grooves in thin silver films, Appl. Phys. Lett. 82 (2003) 1368-1370.
  • L. Bischoff and B. Schmidt, Low capacitance point diodes fabricated with focused ion beam implantation, SolidStateElectronics 47 (2003) 989-993.
  • M. Posselt, L. Bischoff, J. Teichert and A. Ster, Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC: Influence on the shape of channeling implantation profiles, J. Appl. Phys.93 (2003) 1004-1013.
  • L. Bischoff and G.L.R. Mair, Alloy liquid metal ion sources for mass separated focused ion beams, Recent Research Developments in Applied Physics, 6 (2003) 123-133.
  • T. Tsvetkova, O. Angelov, M. Senova-Vassieva, D. Dimora-Malinovska, L. Bischoff, G.J. Andriaenssens, W. Grudzinski and J. Zuk, Structural and optical properties modification of a-SiC:H by Ga+implantation, Vacuum 70 (2003) 467-470.
  • Ch. Akhmadaliev and L. Bischoff, Analysis of microstructures using the ion-acoustic effect, Materials Science and Engineering B 102 (2003) 8-11.
  • Th. Ganetsos, G.L.R Mair, C.J. Aidinis and L. Bischoff, Characteristics of erbium-producing liquid metal ion sources, Physica B 340-342 (2003) 1166-1170.
  • G.L.R. Mair, Ch. Akhmadaliev, L. Bischoff, Th. Ganetsos and C.J. Aidinis, Electrohydrodynanic instabilities on a liquid anode displaying an anomalous surface tension coefficient, Nucl. Instr. Meth. in Phys. Res. B 211 (2003) 556-561.
  • A. Gorbunov, A.A. Levin, E. Wieser, L. Bischoff, D. Eckert, A. Mensch, M. Mertig, D.C. Meyer, H. Reuther, P. Paufler, and W. Pompe, Formation and decomposition of laser-deposited metastable Fe-Cr phases, Proc. SPIE 5121 (2003) 306 - 316.

2002

  • G.L.R. Mair, L. Bischoff, A.W.R. Mair, C.J. Aidinis, Th. Ganetsos, and C.A.Aleiev, An in-depth investigation of the energy distribution of doubly-charged ions emitted from a Liquid Metal Alloy Ion Source, J. Phys. D: Appl. Phys. 35 (2002) L 33 -L 36.
  • G.L.R. Mair, C.J. Aidinis, L. Bischoff, and Th. Ganetsos, On the dynamics of liquid metal ion sources ,J. Phys. D: Appl. Phys. 35 (2002) 1392 - 1396.
  • A. Travlos, N. Boukos, G. Apostolopoulos, C.J. Aidinis and L. Bischoff, Epitaxial erbium silicide on Ge+ implanted silicon, Nucl. Instr. Meth. in Phys. Res. B 196(2002) 174-179.
  • Posselt, M., Bischoff, L., Teichert, J., Ster, A. Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC, Mat. Res. Soc. Symp. Proc. Vol. 719(2002) F11.2.1 - F11.2.7.
  • Ch. Akhmadaliev, G.L.R. Mair, , C.J. Aidinis and L. Bischoff, Frequency spectra and eletrohydrodynamic phenomena in a liquid gallium field ion emission source, J. Phys. D: Appl. Phys. 35 (2002) L91-L93.
  • D. Späth, H. Tritschler, L. Bischoff and W. Schulz, Micromilling - High Potential Technology for Micromechanical Parts, Proceedings of the 6th International Conference on Advanced Manufacturing Systems andTechnology, AMST 02, June 20 - 21, Udine, Italy.
  • J. Schmidt, H. Tritschler and L. Bischoff, Improvement of Micro End Milling Tools through Variation of Tool Manufacturing Method and Geometry, International Journal of Nonlinear Sciences and Numerical Simulation 3 (2002) 595-598.
  • L. Bischoff, G.L.R Mair, C.J. Aidinis, and Th. Ganetsos, Fundamental properties of erbium-ions-producing liquid metal alloy ion sources, Nucl. Instr. Meth. in Phys. Res. B 197(2002) 282-287.

2001

  • L. Bischoff, J. Teichert, and S. Hausmann, Dose rate dependence of irradiation damage in silicon, Nucl Instr. Meth in Phys. Res. B178 (2001) 165-169.
  • J. Martin, L. Bischoff , and R. Wannemacher, Microscopy of Ion-Beam Generated Fluorescent Color Center Patterns in LiF, Opt. Commun. 188 (2001) 119-128.
  • Ch. Akhmadaliev, L. Bischoff, J. Teichert, and K. Kazbekov, Ion acoustic microscopy for imaging of buried structures based on a focused ion beam, Microelectronic Engineering 57 - 58 (2001) 659 � 664.
  • Th. Ganetsos, C. Aidinis, L. Bischoff, G.L.R. Mair, J. Teichert, D. Panknin and I.Papadopoulos, Liquid metal ion source-produced germanium ions for maskless ion implantation, J. Phys. D: Appl. Phys. 34 (2001) L 11 - L 13
  • C. J. Aidinis, G. L. R. Mair, L. Bischoff and I.Papadopoulos, A study of the temperature dependence of the energy spread and energy deficit of a Ge++ ion beam produced by a liquid metal alloy ion source, J. Phys. D: Appl. Phys. 34 (2001) L 14 -L 16.
  • L. Bischoff, J. Teichert, Th. Ganetsos and G.L.R. Mair, Effect of Temperature on the Electric Emission Characteristics of Liquid Metal Alloy Ion Sources, J. Vac. Sci. Technol. B19 (2001) 76-78.
  • M. Posselt, J. Teichert, L. Bischoff and S. Hausmann, Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation, Nucl Instr. Meth in Phys. Res. B178 (2001) 170-175.
  • M. Posselt, L. Bischoff and J. Teichert, Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses, Appl. Phys. Lett.79 (2001) 1444-1446.
  • Th. Ganetsos, G. L. R. Mair, L. Bischoff, J. Teichert and D. Kioussis, A study of liquid metal alloy ion sources for the production of ions of interest in the microelectronics industry, SolidStateElectronics 45 (2001) 1049-1054.
  • L. Bischoff and J. Teichert, Writing Cobalt FIB Implantation into 6H:SiC Applied Surface Science 184 (2001) 336-339.
  • L. Bischoff, J. Teichert and V. Heera, Focused Ion Beam Sputtering Investigations on SiC, Applied Surface Science 184 (2001) 372-376.

2000

  • L. Bischoff, J. Teichert, S. Hausmann, T. Ganetsos, and G.L.R. Mair, Investigation and optimization of the emission parameters of alloy liquid metal ion sources, Nucl Instr. Meth in Phys. Res. B 161-163 (2000) 1128-1131.
  • L. Bischoff, J. Teichert , S. Hausmann , T. Ganetsos and G.L.R. Mair, Temperature and energy spread investigations of alloy LMIS, Microelectronic Engineering, 53 (2000) 613-616.
  • J. Teichert, L. Bischoff, S. Hausmann, M. Voelskow and H. Hobert, Micro- Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation, Appl. Phys A 71 (2000) 175-180.
  • S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, and W. Möller, Dwell-time related effects in focused ion beam synthesis of cobalt disilicide, J. Appl. Phys. 87 (2000) 57 - 62.
  • L. Bischoff, J. Teichert, Th. Ganetsos and G.L.R. Mair, Temperature Dependence of the Electric Characteristics of Liquid Metal Alloy Ion Sources, J. Vac. Sci. and Technol. B19 (2001) 76 -78.
  • L. Bischoff, Th. Ganetsos, J. Teichert, and G.L.R. Mair, Temperature dependence of emission spectra of liquid metal alloy ion sources, Nucl. Instr. Meth. in Phys. Res. B164-165(2000) 999 - 1003.
  • J. Teichert, H. Hobert, L. Bischoff, and S. Hausmann, Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation, Microelectronic Engineering 50 (2000) 187-192.
  • L. Bischoff, J. Teichert, Th. Ganetsos, and G.L.R. Mair, Temperature dependence of the electric characteristics of liquid metal alloy ion sources, J. Phys. D: Appl. Phys. 33 (2000) 692-695.
  • L. Bischoff and J. Teichert, Liquid metal ion source working with an Er70Fe22Ni5Cr3 alloy, J. Phys. D: Appl. Phys. 33 (2000) L69-L72.
  • G.L.R. Mair, Th. Ganetsos, L. Bischoff, and J. Teichert, Doubly-charged ions from liquid metal alloy ion sources: direct field-evaporation or post-ionization?, J. Phys. D: Appl. Phys. 33 (2000) L86– L89.

Diploma theses

  • Roman Böttger, Nanostructures on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching, TU Chemnitz 01/2011
  • Sylvia Mucke, Herstellung von Nanometer-Strukturen mittels feinfokussiertem Ionenstrahl (FIB), Hochschule Mittweida (FH) 02/2004

PhD theses

  • Peter Philipp, Phase transformation in tetrahedral amorphous carbon by focused ion beam irradiation, TU Dresden 01/2014
  • Roman Böttger, Self-organized nanostructures by heavy ion Irradiation: defect kinetics and melt pool Dynamics, TU Chemnitz 01/2014
  • Chavkat Akhmadaliev, Investigation of acoustic waves generated in an elastic solid by a pulsed ion beam and their application in a FIB based scanning ion acoustic microscope, TU Dresden 10/2004
  • Stefan Hausmann, Die Dynamik von Strahlenschäden durch fokussierte Ionenstrahlen am Beispiel der Ionenstrahlsynthese, TU Dresden 10/2000

Patents

  • L. Bischoff und Ch. Akhmadaliev,
    Flüssigmetall-Ionenquelle zur Erzeugung von Lithium Ionenstrahlen
    Patentanmeldung DE 10 2007 027 097.8 (2007)
  • W. Pilz und L. Bischoff,
    Emitter for an ion source and method of producing same
    European patent application 04017894.9 Applicant : ICT GmbH 28.07.2004.
    European patent application 05016351.8 Applicant : ICT GmbH 27.07.2005.
  • T. Tsvetkova, L. Bischoff, J. Teichert,
    Schichtmaterial für optische Informationsträger und Lichtmasken sowie Verfahren zur Herstellung des Schichtmaterials
    Patentanmeldung AZ 101 43 616.5 06.09 (2001)
  • B. Schmidt, L. Bischoff, L. Eng,
    Verfahren zur Herstellung von integrierten Abtastnadeln
    Patent: DE 100 57 656 C1 (2000)
    Patent: EP 1 209 689 A2
  • B. Köhler, L. Bischoff and J. Teichert,
    Vorrichtung und Verfahren zur gezielten Probenbearbeitung, vorzugsweise von Halbleiterbauelementen, mittels einer Ionen-Feinstrahlanlage
    Patentanmeldung 196.06.479.3 (1996)
  • J. Teichert and E. Hesse,
    Flüssigmetallionenquelle zur Emission von Kobaltionenstrahlen
    Deutsches Patent DE 4312028 A1 (1994)
    Europäisches Patent 94105227.6 (1994)

Projects

  • Liquid Metal Alloy Ion Sources for Providing of special Ions of Interest for Nano- and Quantum Technology

    Project ID: ZF4330902 DF7 11/2017 – 12/2019

    Abstract: The Raith company in Dortmund develops special systems for structuring od devices for nano- and quantum technology. The Helmholtz Center Rossendorf (HZDR) works on new ion sources from certain alloys for research and development.

    In the running project both trends were combined to develop an ion beam lithography system for the patterning of the next generation of nano- and quantum devices. The Raith GmbH presented the VELION instrument, a FIB/SEM system with mass separated ion column and the HZDR is focused on the development of special suited ion sources, containing AuGeSi, AuSiCr, AuBGeNi and GaBiLi for the emission of a broad spectrum of needed ions..


Contact

Dr. Lothar Bischoff

l.bischoffAthzdr.de
Phone: +49 351 260 2866
+49 351 260 2963