High temperature in situ diffraction
Thin films of indium tin oxide were widely used as optoelectronic devices. They can by produced by reactive magnetron sputtering. The obtained film is crystallin at elevated subrate temperature during the process or amorphous, if it is grown at room temperature. In such films crystallisation starts by annealing. In this investigation the films were heated by a direct applied electric current flow through the film, which gives lower process temperatures for crystallisation compared to conventional isothermal annealing. The film resistance show different behaviour in vacuum and under air atmosphere, which give evidence for different crystallisation processes.
Rogozin A., Shevchenko N., Vinnichenko M., Seidel M., Kolitsch A., and Moller W. (2006) Annealing of indium tin oxide films by electric current: Properties and structure evolution. Applied Physics Letters 89, 061908.
Rogozin A., Shevchenko N., Vinnichenko M., Prokert F., Cantelli V., Kolitsch A., and Möller W. (2004) Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum. Applied Physics Letters 85, 212-214.