Magnetron Sputtering

General description

Four multi-flange deposition chambers (Roth & Rau) are installed with every chamber being devoted to a separate research task or material system. Each chamber is equipped with two identical magnetrons and precise substrate manipulator. The magnetrons can be operated two in parallel and each separately. This allows investigation of the effects of the deposition geometry on the film properties. Availability of both balanced and unbalanced magnetrons makes possible investigation of the effects of bombardment by energetic particles (positive and negative ions, energetic neutrals) on the film characteristics. The magnetrons are operated in unipolar mode at medium frequencies (2-150 kHz, 0-50% duty cycle), in the DC or RF mode. Investigations are mainly performed for reactive pulsed magnetron sputtering using metallic targets, while current projects include also sputtering of electrically conductive ceramic targets.

Parameters and Controls

Magnetron target diameter: 50 or 75 mm
Magnetron power: PDC <750 W (for 50 mm)
Target-substrate distance: 40-100 mm
Substrate holder diameter: 70 mm
Substrate manipulator: XYZ-Theta
Substrate heating: BN heater (Tectra)
Substrate temperature: RT-600 �C
Base pressure (after baking): ~3x10-5 Pa
Pumping speed control: VAT valve
Process gas: Ar
Reactive gases: O2, N2, H2
Gas flow controllers: MKS
Process pressure control: capacitance gauge (Pfeiffer) mass spectrometers
Total pressure ranges: 0.3 - 2 Pa

Magnetron Sputtering Installations

Reactive pulsed magnetron sputtering (RPMS)

In order to combine a high deposition rate and a stoichiometric oxide film composition during RPMS it is necessary to stabilize the magnetron discharge in the transition mode. This offers a possibility to vary precisely the oxygen to metal flux ratio and enable an additional tool to control the film properties. Such potential advantage remains mainly unexplored due to limited understanding of the processes at the magnetron target surface and in the plasma. Therefore, present research deals with in situ controlled variation of the oxygen partial pressure during reactive magnetron sputtering.

Contact: Dr. Vinnichenko, Mykola

Reactive pulsed magnetron sputtering