Ion beam processed functional materials for spintronics and optoelectronics
Our research focus is “ion beam processed functional materials for spintronics and optoelectronics”. Ion implantation plus pulsed laser annealing offer a unique, non-equilibrium approach to design highly doped semiconductors, which are key materials for semiconductor spintronics and the new generation of photodetectors with a conceptual innovation. We are addressing the following scientific issues:
- The melting and solidification process of ion implanted semiconductors upon laser irradiation;
- Using ion implantation and short time annealing to fabricate highly doped semiconductors for spintronic and optoelectronics applications;
- The defect engineering of diluted magnetic semiconductors by ions: finely tuning the carrier concentration and creating planar local structures;
- Improve the homogeneity of photovoltaic thin films using short-time annealing;
- Using ion beams to better understand highly doped semiconductors: lattice location of impurities, depth profile of impurity concentration and strain.
Using ions we can do many things for semiconductors, the work horses for modern information technologies.
For more details, check our publications.
- Prof. Dr. Carsten Timm, Institut für Theoretische Physik, Technische Universität Dresden
- Prof. Dr. Bryan Gallagher, School of Physics & Astronomy, University of Nottingham
- Prof. Dr. Jianhua Zhao, Institute of Semiconductors, CAS, Beijing, China
- Prof. Dr. Qingyu Xu, Southeast University, Nanjing, China
- Prof. Dr. Wenxu Zhang, University of Electronic Science and Technology of China, Chengdu, China
- Prof. Dr. Feng Chen, School of Physics, Shandong University, Jinan 250100, China