Contact

Dr. Wolfgang Skorupa
Head
w.skorupaAthzdr.de
Phone: +49 351 260 - 3612
Fax: 13612, 3411

Publication list


2017

Prucnal, S.; Wu, J.; Berencen, Y.; Liedke, M. O.; Wagner, A.; Liu, F.; Wang, M.; Rebohle, L.; Zhou, S.; Cai, H.; Skorupa, W.
Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies
Journal of Applied Physics 122(2017), 035303

Saini, C. P.; Barman, A.; Banerjee, D.; Grynko, O.; Prucnal, S.; Gupta, M.; Phase, D. M.; Sinha, A. K.; Kanjilal, D.; Skorupa, W.; Kanjilal, A.
Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids
Journal of Physical Chemistry C 121(2017)21, 11448-11454

Bürger, D.; Baunack, S.; Thomas, J.; Oswald, S.; Wendrock, H.; Rebohle, L.; Schumann, T.; Skorupa, W.; Blaschke, D.; Gemming, T.; Schmidt, O. G.; Schmidt, H.
Evidence for self-organized formation of logarithmic spirals during explosive crystallization of amorphous Ge:Mn layers
Journal of Applied Physics 121(2017)18, 184901

Liu, Y.; Yuan, Y.; Liu, F.; Böttger, R.; Anwand, W.; Wang, Y.; Semisalova, A.; Ponomaryov, A.; Lu, X.; N’Diaye, A. T.; Arenholz, E.; Heera, V.; Skorupa, W.; Helm, M.; Zhou, S.
Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC
Physical Review B 95(2017), 195309

Ratajczak, R.; Prucnal, S.; Guziewicz, E.; Mieszczynski, C.; Snigurenko, D.; Stachowicz, M.; Skorupa, W.; Turos, A.
The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing
Journal of Applied Physics 121(2017), 075101

Berencén, Y.; Prucnal, S.; Liu, F.; Skorupa, I.; Hübner, R.; Rebohle, L.; Zhou, S.; Schneider, H.; Helm, M.; Skorupa, W.
Room-temperature short-wavelength infrared Si photodetector
Scientific Reports 7(2017), 43688

Prucnal, S.; Rebohle, L.; Skorupa, W.
Doping by flash lamp annealing
Materials Science in Semiconductor Processing 62(2017), 115-127

Wutzler, R.; Rebohle, L.; Prucnal, S.; Grenzer, J.; Hübner, R.; Böttger, R.; Skorupa, W.; Helm, M.
Formation of InxGa1-xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing
New Journal of Physics 19(2017), 063019

Skorupa, W.; Schumann, T.; Rebohle, L.
Millisecond thermal processing using flash lamps for the advancement of thin layers and functional coatings
Surface & Coatings Technology 314(2017), 169-176


2016

Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.
Enhancement of carrier mobility in thin Ge layer by Sn co-doping
Semiconductor Science and Technology 31(2016)105012

Weiss, C.; Schnabel, M.; Prucnal, S.; Hofmann, J.; Reichert, A.; Fehrenbach, T.; Skorupa, W.; Janz, S.
Formation of silicon nanocrystals in silicon carbide using flash lamp annealing
Journal of Applied Physics 120(2016), 105103

Liu, Y.; Chen, L.; Hilliard, D.; Huang, Q.-S.; Liu, F.; Wang, M.; Böttger, R.; Hübner, R.; N'Diaye, A. T.; Arenholz, E.; Heera, V.; Skorupa, W.; Zhou, S.
Controllable growth of vertically aligned graphene on C-face SiC
Scientific Reports 6(2016), 34814

Heera, V.; Fiedler, J.; Skorupa, W.
Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates
AIP Advances 6(2016), 105203

Liu, F.; Prucnal, S.; Hübner, R.; Yuan, Y.; Skorupa, W.; Helm, M.; Zhou, S.
Suppressing the cellular breakdown in silicon supersaturated with titanium
Journal of Physics D: Applied Physics 49(2016), 245104

Prucnal, S.; Liu, F.; Voelskow, M.; Vines, L.; Rebohle, L.; Lang, D.; Berencén, Y.; Andric, S.; Boettger, R.; Helm, M.; Zhou, S.; Skorupa, W.
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Scientific Reports 6(2016), 27643

Glaser, M.; Kitzler, A.; Johannes, A.; Prucnal, S.; Potts, H.; Conesa-Boj, S.; Filipovic, L.; Kosina, H.; Skorupa, W.; Bertagnolli, E.; Ronning, C.; Fontcuberta I. Morral, A.; Lugstein, A.
Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
Nano Letters 16(2016)6, 3507-3513

Lindberg, P. F.; Lipp Bregolin, F.; Wiesenhütter, K.; Wiesenhütter, U.; Riise, H. N.; Vines, L.; Prucnal, S.; Skorupa, W.; Svensson, B. G.; Monakhov, E. V.
The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures
Journal of Applied Physics 119(2016), 185305

Xu, M.; Gao, K.; Wu, J.; Cai, H.; Yuan, Y.; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, S.
Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting
Materials Research Express 3(2016), 036403

Rebohle, L.; Prucnal, S.; Skorupa, W.
A review of thermal processing in the subsecond range: semiconductors and beyond
Semiconductor Science and Technology 31(2016)10, 103001

Berencén, Y.; Illera, S.; Rebohle, L.; Ramírez, J. M.; Wutzler, R.; Cirera, A.; Hiller, D.; Rodríguez, J. A.; Skorupa, W.; Garrido, B.
Luminescence mechanism for Er3+ ions in a silicon-rich nitride host under electrical pumping
Journal of Physics D: Applied Physics 49(2016), 085106

Wutzler, R.; Rebohle, L.; Prucnal, S.; Hübner, R.; Facsko, S.; Böttger, R.; Helm, M.; Skorupa, W.
III-V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
Materials Science in Semiconductor Processing 42(2016)2, 166-169


2015

Cherkouk, C.; Rebohle, L.; Lenk, J.; Keller, A.; Ou, X.; Laubec, M.; Neuber, C.; Haase-Kohn, C.; Pietzsch, J.; Skorupa, W.
Controlled immobilization of His-tagged proteins for protein-ligand interaction experiments using Ni2+-NTA layer on glass surfaces
Clinical Hemorheology and Microcirculation 61(2015), 523

Prucnal, S.; Gao, K.; Skorupa, I.; Rebohle, L.; Vines, L.; Schmidt, H.; Khalid, M.; Wang, Y.; Weschke, E.; Skorupa, W.; Grenzer, J.; Hübner, R.; Helm, M.; Zhou, S.
Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence
Physical Review B 92(2015), 224407

Gaiduk, Peter I.; Hansen, J. L.; Larsen, A. N.; Skorupa, W.
Comparative study of defect evolution in carbon implanted strained SiGe and SiSn layers
Physica Status Solidi (C) 12(2015)1-2, 120-125

Heera, V.; Fiedler, J.; Skorupa, J.; Skorupa, W.
Resistance fluctuations in insulating silicon films with superconducting nanopreciptitates – superconductor-to-metal or vortex matter phase transition?
AIP Advances 5(2015), 117219

Riise, H. N.; Schumann, T.; Azarov, A.; Hübner, R.; Skorupa, W.; Svensson, B. G.; Monakhov, E.
Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials
Applied Physics Letters 107(2015), 022105

Yuan, Y.; Wang, Y.; Gao, K.; Khalid, M.; Wu, C.; Zhang, W.; Munnik, F.; Weschke, E.; Baehtz, C.; Skorupa, W.; Helm, M.; Zhou, S.
High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
Journal of Physics D: Applied Physics 48(2015), 235002

Wutzler, R.; Rebohle, L.; Prucnal, S.; Bregolin, F.; Hübner, R.; Voelskow, M.; Helm, M.; Skorupa, W.
Liquid phase epitaxy of binary III-V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing
Journal of Applied Physics 117(2015)17, 175307

Henke, T.; Knaut, M.; Hossbach, C.; Geidel, M.; Rebohle, L.; Albert, M.; Skorupa, W.; Bartha, J.
Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films
ECS Journal of Solid State Science and Technology 4(2015)7, 277-287

Khalid, M.; Gao, K.; Weschke, E.; Hübner, R.; Baehtz, C.; Gordan, O.; Salvan, G.; Zahn, D. R. T.; Skorupa, W.; Helm, M.; Zhou, S.
A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP
Journal of Applied Physics 117(2015), 043906

Zhou, S.; Liu, F.; Prucnal, S.; Gao, K.; Khalid, M.; Baehtz, C.; Posselt, M.; Skorupa, W.; Helm, M.
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy
Scientific Reports 5(2015), 8329

Heera, V.; Fiedler, J.; Schmidt, B.; Hübner, R.; Voelskow, M.; Skrotzki, R.; Skorupa, W.
Negative magneto- and electroresistance of silicon films with superconducting nanopreciptates - the role of inelastic cotunneling
Journal of Low Temperature Physics 180(2015)5-6, 342-355


2014

Henke, T.; Knaut, M.; Hossbach, C.; Geidel, M.; Rebohle, L.; Albert, M.; Skorupa, W.; Bartha, J.
Flash-Lamp-Enhanced Atomic Layer Deposition of Thin Films
ECS Transactions 64(2014)9, 167-189

Yuan, Y; Wang, Y.; Khalid, M.; Gao, K.; Prucnal, S.; Gordan, O. D.; Salvan, G.; Zahn, D. T.; Skorupa, W.; Helm, M.; Zhou, S.
Ferromagnetic GaMnP Prepared by Ion Implantation and Pulsed Laser Annealing
IEEE Transactions on Magnetics 50(2014)11, 2401304

Prucnal, S.; Jiao, F.; Reichel, D.; Zhao, K.; Cornelius, S.; Turek, M.; Pyszniak, K.; Drozdziel, A.; Skorupa, W.; Helm, M.; Zhou, S.
Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
Acta Physica Polonica A 125(2014), 1404-1407

Prucnal, S.; Glaser, M.; Lugstein, A.; Bertagnolli, E.; Stöger-Pollach, M.; Zhou, S.; Helm, M.; Reichel, D.; Rebohle, L.; Turek, M.; Zuk, J.; Skorupa, W.
III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy
Nano Research 7(2014)12, 1769-1776

Prucnal, S.; Gao, K.; Zhou, S.; Wu, J.; Cai, H.; Gordan, O. D.; Zahn, D. R. T.; Larkin, G.; Helm, M.; Skorupa, W.
Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing
Applied Physics Letters 105(2014), 221903

Gaiduk, P. I.; Lundsgaard Hansen, J.; Nylandsted Larsen, A.; Bregolin, F. L.; Skorupa, W.
Suppression of tin precipitation in SiSn alloy layers by implanted carbon
Applied Physics Letters 104(2014), 231903

Rebohle, L.; Berencén, Y.; Wutzler, R.; Braun, M.; Hiller, D.; Ramírez, J. M.; Garrido, B.; Skorupa, W.; Helm, M.
The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments
Journal of Applied Physics 116(2014), 123104

Chen, Y. N.; Xu, S. J.; Zheng, C. C.; Ning, J. Q.; Ling, F. C. C.; Anwand, W.; Brauer, G.; Skorupa, W.
Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition
Applied Physics Letters 105(2014), 041912

Gao, K.; Prucnal, S.; Huebner, R.; Baehtz, C.; Skorupa, I.; Wang, Y.; Skorupa, W.; Helm, M.; Zhou, S.
Ge(1-x)Sn(x) alloys synthesized by ion implantation and pulsed laser melting
Applied Physics Letters 105(2014)4, 042107

Gao, K.; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, S.
Formation and photoluminescence of GaAs(1-x)N(x) dilute nitride achieved by N-implantation and flash lamp annealing
Applied Physics Letters 105(2014)1, 012107

Gaiduk, P. I.; Lundsgaard Hansen, J.; Larsen, A. N.; Korolik, O. V.; Bregolin, F. L.; Skorupa, W.
Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures
Microelectronic Engineering 125(2014)1, 8-13

Tiagulskyi, S. I.; Nazarov, A. N.; Gordienko, S. O.; Vasin, A. V.; Rusavsky, A. V.; Rebohle, L.; Voelskow, M.; Skorupa, W.
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide
Semiconductor Physics, Quantum Electronics & Optoelectronics 17(2014)1, 34-40

Rebohle, L.; Braun, M.; Wutzler, R.; Liu, B.; Sun, J. M.; Helm, M.; Skorupa, W.
Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition
Applied Physics Letters 104(2014), 251113

Fiedler, J.; Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.
High-fluence Ga-implanted silicon – the effect of annealing and cover layers
Journal of Applied Physics 116(2014), 024502

Khalid, M.; Prucnal, S.; Liedke, M. O.; Gao, K.; Facsko, S.; Skorupa, W.; Helm, M.; Zhou, S.
Synthesis and characterization of MnAs and MnP nanoclusters embedded in III–V semiconductors
Materials Research Express 1(2014), 026105

Khalid, M.; Weschke, E.; Skorupa, W.; Helm, M.; Zhou, S.
Ferromagnetism and impurity band in a magnetic semiconductor: InMnP
Physical Review B 89(2014), 121301(R)

Prucnal, S.; Zhou, S.; Ou, X.; Facsko, S.; Liedke, M. O.; Bregolin, F.; Liedke, B.; Grebing, J.; Fritzsche, M.; Hübner, R.; Mücklich, A.; Rebohle, L.; Helm, M.; Turek, M.; Drozdziel, A.; Skorupa, W.
III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
Journal of Applied Physics 115(2014), 074306

Wang, Y.; Li, L.; Prucnal, S.; Chen, X.; Tong, W.; Yang, Z.; Munnik, F.; Potzger, K.; Skorupa, W.; Gemming, S.; Helm, M.; Zhou, S.
Disentangling defect-induced ferromagnetism in SiC
Physical Review B 89(2014), 014417

Lipp Bregolin, F.; Krockert, K.; Prucnal, S.; Vines, L.; Hübner, R.; Svensson, B. G.; Wiesenhütter, K.; Möller, H.-J.; Skorupa, W.
Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates
Journal of Applied Physics 115(2014)6, 064505

Henke, T.; Bartha, J. W.; Rebohle, L.; Merkel, U.; Hübner, R.; Albert, M.; Skorupa, W.
Formation of regularly arranged large grain silicon islands by using embedded micro mirrors in the flash crystallization of amorphous silicon
Journal of Applied Physics 115(2014), 034301

Wang, Y.; Chen, X.; Li, L.; Shalimov, A.; Tong, W.; Prucnal, S.; Munnik, F.; Yang, Z.; Skorupa, W.; Helm, M.; Zhou, S.
Structural and magnetic properties of irradiated SiC
Journal of Applied Physics 115(2014), 17C104

Voelskow, M.; Endler, R.; Schumann, T.; Mücklich, A.; Ou, X.; Liepack, E. H.; Gebel, T.; Peeva, A.; Skorupa, W.
Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation
Journal of Crystal Growth 388(2014), 70-75

Heera, V.; Fiedler, J.; Naumann, M.; Skrotzki, R.; Kölling, S.; Wilde, L.; Herrmannsdörfer, T.; Skorupa, W.; Wosnitza, J.; Helm, M.
Depth-resolved transport measurements and atom-probe tomography of heterogeneous, superconducting Ge:Ga films
Superconductor Science and Technology 27(2014), 055025


2013

Prucnal, S.; Turek, M.; Gao, K.; Zhou, S.; Pyszniak, K.; Drozdziel, A.; Zuk, J.; Skorupa, W.
III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Acta Physica Polonica A 123(2013), 935-938

Prucnal, S.; Liedke, M. O.; Zhou, S.; Voelskow, M.; Mucklich, A.; Turek, M.; Zuk, J.; Skorupa, W.
Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
Nuclear Instruments and Methods in Physics Research B 312(2013), 104-109

Normann, H. B.; Vines, L.; Privitera, V.; Skorupa, W.; Schumann, T.; Svensson, B. G.; Monakhov, E. V.
Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells
Applied Physics Letters 102(2013)13, 132108

Gao, K.; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, S.
Origin and enhancement of the 1.3 mu m luminescence from GaAs treated by ion-implantation and flash lamp annealing
Journal of Applied Physics 114(2013), 093511-1-093511-6

Berencen, Y.; Wutzler, R.; Rebohle, L.; Hiller, D.; Ramirez, J. M.; Rodriguez, J. A.; Skorupa, W.; Garrido, B.
Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Applied Physics Letters 103(2013), 111102

Gao, K.; Prucnal, S.; Mücklich, A.; Skorupa, W.; Zhou, S.
Fabrication of Si1-xGex Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing
Acta Physica Polonica A 123(2013), 858-861

Heera, V.; Fiedler, J.; Hübner, R.; Schmidt, B.; Voelskow, M.; Skorupa, W.; Skrotzki, R.; Herrmannsdörfer, T.; Wosnitza, J.; Helm, M.
Silicon Films with Gallium Rich Nanograins - from Superconductor to Insulator
New Journal of Physics 15(2013), 083022

Lehmann, J.; Hübner, R.; Skorupa, W.; von Borany, J.; Mikolajick, T.; Schäfer, A.; Schubert, J.; Mantl, S.
Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Microelectronic Engineering 109(2013), 381-384

Anwand, W.; Butterling, M.; Johnson, J. M.; Reuther, H.; Wagner, A.; Skorupa, W.; Brauer, G.
Flash lamp annealing of Tungsten surfaces marks a new way to optimized slow positron yields
Journal of Physics: Conference Series 443(2013), 012072

Prucnal, S.; Rebohle, L.; Sun, J. M.; Skorupa, W.; Drozdziel, A.; Pyszniak, K.; Turek, M.; Zuk, J.
Sensitization of the blue-green electroluminescence by gadolinium coupled to Si nanocluster embedded in a SiO2 matrix
Materials Science - Medziagotyra 19(2013)2, 125-128

Fiedler, J.; Heera, V.; Voelskow, M.; Mücklich, A.; Reuther, H.; Skorupa, W.; Gobsch, G.; Helm, M.
Superconducting layers by gallium implantation and short-term annealing in semiconductors
Acta Physica Polonica A 123(2013)5, 916-919


2012

Brombacher, C.; Schubert, C.; Daniel, M.; Liebig, A.; Beddies, G.; Schumann, T.; Skorupa, W.; Donges, J.; Häberlein, S.; Albrecht, M.
Chemical ordering of FePt films using millisecond flash-lamp annealing
Journal of Applied Physics 111(2012), 023902-1-023902-4

Prucnal, S.; Zhou, S.; Ou, X.; Reuther, H.; Liedke, M. O.; Mücklich, A.; Helm, M.; Zuk, J.; Turek, M.; Pyszniak, K.; Skorupa, W.
InP nanocrystals on silicon for optoelectronic applications
Nanotechnology 23(2012), 485204

Prucnal, S.; Gao, K.; Anwand, W.; Helm, M.; Skorupa, W.; Zhou, S.
Temperature stable 1.3 um emission from GaAs
Optics Express 20(2012), 26075-26081

Ou, X.; Kögler, R.; Zhou, H.; Anwand, W.; Grenzer, J.; Hübner, R.; Voelskow, M.; Butterling, M.; Zhou, S.; Skorupa, W.
Release of helium from vacancy defects in yttria-stabilized zirconia under irradiation
Physical Review B 86(2012), 224103

Dai, X. M.; Xu, S. J.; Gu, Q. L.; Ling, C. C.; Brauer, G.; Anwand, W.; Skorupa, W.
Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory
Journal of Applied Physics 112(2012), 046102

Tiagulskyi, S.; Nazarov, A.; Tyagulskii, I.; Lysenko, V.; Rebohle, L.; Lehmann, J.; Skorupa, W.
Shell model for REOx nanoclusters in amorphous SiO2: charge trapping and electroluminescence quenching
Physica Status Solidi (C) 9(2012)6, 1468-1470

Tiagulskyi, S. I.; Tyagulskiy, I. P.; Nazarov, А. N.; Nazarova, T. M.; Rymarenko, N. L.; Lysenko, V. S.; Rebohle, L.; Lehmann, J.; Skorupa, W.
Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOX Nanoclusters
ECS Transactions 45(2012)5, 161-166

Reichel, D.; Skorupa, W.
Precise millisecond annealing for advanced material processing
Physica Status Solidi (C) 9(2012)10-11, 2045-2049

Heera, V.; Fiedler, J.; Voelskow, M.; Mücklich, A.; Skrotzki, R.; Herrmannsdörfer, T.; Skorupa, W.
Superconductor-insulator transition controlled by annealing in Ga implanted Si
Applied Physics Letters 100(2012), 262602

Fiedler, J.; Heera, V.; Skrotzki, R.; Herrmannsdörfer, T.; Voelskow, M.; Mücklich, A.; Facsko, S.; Reuther, H.; Perego, M.; Heinig, K.-H.; Schmidt, B.; Skorupa, W.; Gobsch, G.; Helm, M.
Superconducting Ga-overdoped Ge layers capped with SiO2 – structural and transport investigations
Physical Review B 85(2012), 134530

Prucnal, S.; Shalimov, A.; Ozerov, M.; Potzger, K.; Skorupa, W.
Magnetic and optical properties of virgin arc furnace grown MgO crystals
Journal of Crystal Growth 339(2012)1, 70-74

Prucnal, S.; Abendroth, B.; Krockert, K.; König, K.; Henke, D.; Kolitsch, A.; Möller, H. J.; Skorupa, W.
Millisecond annealing for advanced doping of dirty-silicon solar cells
Journal of Applied Physics 111(2012), 123104

Rebohle, L.; Lehmann, J.; Prucnal, S.; Helm, M.; Skorupa, W.
The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared
Journal of Luminescence 132(2012), 3151-3153

Bürger, D.; Zhou, S.; Höwler, M.; Ou, X.; Kovacs, G.; Reuther, H.; Mücklich, A.; Skorupa, W.; Helm, M.; Schmidt, H.
Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet
Applied Physics Letters 100(2012), 012406-1

Bürger, D.; Seeger, M.; Zhou, S.; Skorupa, W.; Schmidt, H.
Transition metal diffusion in diluted magnetic Si and GaAs prepared by pulsed laser processing
Journal of Applied Physics 111(2012), 054914-1-054914-6


2011

Skorupa, W.; Schmidt, H. (Editors)
Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions
Cham, Heidelberg, New York, Dordrecht, London: Springer International Publishing Switzerland, 2014

Zhou, S.; Bürger, D.; Li, L.; Skorupa, W.; Helm, M.; Oesterlin, P.; Schmidt, H.
Ferromagnetic Ge:Mn prepared by ion implantation and pulsed laser annealing
AIP Conference Proceedings 1399(2011), 699

Müller, A.; Lorenz, M.; Brachwitz, K.; Lenzner, J.; Mittwoch, K.; Skorupa, W.; Grundmann, M.; Höche, T.
Fresnoite thin films grown by pulsed laser deposition: photoluminescence and laser crystallization
CrystEngComm 13(2011)21, 6377-6385

Lehmann, J.; Shevchenko, N.; Mücklich, A.; von Borany, J.; Skorupa, W.; Schubert, J.; Lopes, J. M. J.; Mantl, S.
Millisecond flash-lamp annealing of LaLuO3
Microelectronic Engineering 88(2011), 1346-1348

Das Kanungo, P.; Kögler, R.; Zhakarov, N.; Werner, P.; Scholz, R.; Skorupa, W.
Characterization of Structural Changes Associated with Doping Silicon Nanowires by Ion Implantation
Crystal Growth & Design 11(2011)7, 2690-2694

Schmidt, M.; Brachwitz, K.; Schmidt, F.; Ellguth, M.; von Wenckstern, H.; Pickenhain, R.; Grundmann, M.; Brauer, G.; Skorupa, W.
Nickel-related defects in ZnO – A deep-level transient spectroscopy and photo-capacitance study
Physica Status Solidi (B) 248(2011)8, 1949-1955

Ou, X.; Kögler, R.; Wei, X.; Mücklich, A.; Wang, X.; Skorupa, W.; Facsko, S.
Fabrication of horizontal silicon nanowire arrays on insulator by ion irradiation
AIP Advances 1(2011), 042174

Prucnal, S.; Facsko, S.; Baumgart, C.; Schmidt, H.; Liedke, M. O.; Rebohle, L.; Shalimov, A.; Reuther, H.; Kanjilal, A.; Mücklich, A.; Helm, M.; Zuk, J.; Skorupa, W.
n-InAs nanopyramids fully integrated into silicon
Nano Letters 11(2011)7, 2814-2818

Kanjilal, A.; Gemming, S.; Rebohle, L.; Muecklich, A.; Gemming, T.; Voelskow, M.; Skorupa, W.; Helm, M.
Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2
Physical Review B 83(2011), 113302

Fiedler, J.; Heera, V.; Skrotzki, R.; Herrmannsdörfer, T.; Voelskow, M.; Mücklich, A.; Oswald, S.; Schmidt, B.; Skorupa, W.; Gobsch, G.; Wosnitza, J.; Helm, M.
Superconducting films fabricated by high fluence Ga implantation in Si
Physical Review B 83(2011), 214504

Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C.
Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
Journal of Vacuum Science & Technology A 29(2011), 03A103

Anwand, W.; Kanjilal, A.; Brauer, G.; Wagner, A.; Butterling, M.; Cowan, T. E.; Rebohle, L.; Skorupa, W.
Structural characterisation of Er implanted, Ge-rich SiO2 layers using slow positron implantation spectroscopy
Materials Science Forum 666(2011), 41-45

Prucnal, S.; Turek, M.; Drozdziel, A.; Pyszniak, K.; Wójtowicz, A.; Zhou, S. Q.; Kanjilal, A.; Shalimov, A.; Skorupa, W.; Zuk, J.
Optical and microstructural properties of self-assembled InAs quantum structures in silicon
Central European Journal of Physics 9(2011)2, 338-343

Prucnal, S.; Rebohle, L.; Skorupa, W.
Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism
Journal of Non-Crystalline Solids 357(2011)3, 915-918

Ou, X.; Geyer, N.; Kögler, R.; Werner, P.; Skorupa, W.
Acceptor deactivation in individual silicon nanowires: From thick to ultrathin
Applied Physics Letters 98(2011), 253103

Prucnal, S.; Shumann, T.; Skorupa, W.; Abendroth, B.; Krockert, K.; Möller, H. J.
Solar cell emitters fabricated by flash lamp millisecond annealing
Acta Physica Polonica A 120(2011)1, 30-34

Cherkouk, C.; Rebohle, L.; Skorupa, W.
Bioconjugation of the estrogen receptor hER(alpha) to a quantum dot dye for a controlled immobilization on the SiO2 surface
Journal of Colloid and Interface Science 355(2011), 442-447

Reichel, D.; Skorupa, W.; Lerch, W.; Gelpey, Jeffrey C.
Temperature Measurement in Rapid Thermal Processing with focus on the application to Flash Lamp Annealing
Critical Reviews in Solid State and Material Sciences 36(2011)2, 102-128

Voelskow, M.; Stoimenos, I.; Rebohle, L.; Skorupa, W.
The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing
Physica Status Solidi (C) C 8(2011)3, 960-963

Rebohle, L.; Kanjilal, A.; Skorupa, W.; Helm, M.
The inverse energy transfer between Ge nanocrystals and erbium in SiO2 and its dependence on microstructure
Optical Materials 33(2011)7, 1075-1078

Cherkouk, C.; Rebohle, L.; Skorupa, W.
Lysine adsorption on the silanized SiO2-surface for immobilization of the estrogen receptor hER(alpha)
Applied Surface Science 257(2011), 3831-4835


2010

Rebohle, L.; Skorupa, W.
Rare-Earth Implanted MOS Devices for Silicon Photonics
Heidelberg: Springer, 2010

Ou, X.; Das Kanungo, P.; Kögler, R.; Werner, P.; Gösele, U.; Skorupa, W.; Wang, X.
Three-dimensional carrier profiling of individual Si nanowires by scanning spreading resistance microscopy
Advanced Materials 22(2010)36, 4020-4024

Skrotzki, R.; Fiedler, J.; Herrmannsdörfer, T.; Heera, V.; Voelskow, M.; Mücklich, A.; Schmidt, B.; Skorupa, W.; Gobsch, G.; Helm, M.; Wosnitza, J.
On-chip superconductivity via gallium overdoping of silicon
Applied Physics Letters 97(2010), 192505

Prucnal, S.; Turek, M.; Drozdziel, A.; Pyszniak, K.; Zhou, S. Q.; Kanjilal, A.; Zuk, J.; Skorupa, W.
Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing
Applied Physics B 101(2010), 315-319

Kanjilal, A.; Prucnal, S.; Rebohle, L.; Voelskow, M.; Helm, M.; Skorupa, W.
Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
Journal of Applied Physics 107(2010)11, 113523

Nazarov, A. N.; Tiagulskyi, S. I.; Tyagulskyy, I. P.; Lysenko, V. S.; Rebohle, L.; Lehmann, J.; Prucnal, S.; Voelskow, M.; Skorupa, W.
The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices
Journal of Applied Physics 107(2010)12, 123112

Kanjilal, A.; Rebohle, L.; Voelskow, M.; Helm, M.; Skorupa, W.
Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps
Journal of Applied Physics 107(2010), 023114-1-023114-4

Anwand, W.; Brauer, G.; Cowan, T. E.; Heera, V.; Schmidt, H.; Skorupa, W.; von Wenckstern, H.; Brandt, M.; Benndorf, G.; Grundmann, M.
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies
Physica Status Solidi (A) 207(2010), 2426-2431

Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skorupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Wosnitza, J.
Interaction of point defects with impurities in the Si–SiO2 system and its influence on the properties of the interface
Thin Solid Films 518(2010), 2374-2376

Schmidt, M.; Ellguth, M.; Schmidt, F.; Lüder, T.; von Wenckstern, H.; Pickenhain, R.; Grundmann, M.; Brauer, G.; Skorupa, W.
Defects in a nitrogen-implanted ZnO thin film
Physica Status Solidi (B) 247(2010)5, 1220-1226

Zhou, S.; Bürger, D.; Skorupa, W.; Oesterlin, P.; Helm, M.; Schmidt, H.
The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
Applied Physics Letters 96(2010), 202105

Zhou, S.; Bürger, D.; Mücklich, A.; Baumgart, C.; Skorupa, W.; Timm, C.; Oesterlin, P.; Helm, M.; Schmidt, H.
Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism
Physical Review B 81(2010), 165204

Kanjilal, A.; Prucnal, S.; Minniti, M.; Skorupa, W.; Helm, M.; Facsko, S.
Crystalline ripples at the surface of ion eroded strained Si0.8Ge0.2 epilayers
Journal of Applied Physics 107(2010), 073513

Herrmannsdörfer, T.; Skrotzki, R.; Heera, V.; Ignatchik, O.; Uhlarz, M.; Mücklich, A.; Posselt, M.; Schmidt, B.; Heinig, K.-H.; Skorupa, W.; Voelskow, M.; Wündisch, C.; Helm, M.; Wosnitza, J.
Superconductivity in thin-film germanium in the temperature regime around 1 K
Superconductor Science and Technology 23(2010), 034007

Ou, X.; Das Kanungo, P.; Kögler, R.; Werner, P.; Skorupa, W.; Gösele, U.; Wang, X.
Carrier profiling of individual Si nanowires by scanning spreading resistance microscopy
Nano Letters 10(2010), 171-175

Das Kanungo, P.; Kögler, R.; Werner, P.; Gösele, U.; Skorupa, W.
A novel method to fabricate silicon nanowire p-n junctions by a combination of ion implantation and in-situ doping
Nanoscale Research Letters 5(2010)243, 246

Heera, V.; Mücklich, A.; Posselt, M.; Voelskow, M.; Wündisch, C.; Schmidt, B.; Skrotzki, R.; Heinig, K. H.; Herrmannsdörfer, T.; Skorupa, W.
Heavily Ga-doped Germanium Layers Produced by Ion Implantation and Flash Lamp Annealing - Structure and Electrical Activation
Journal of Applied Physics 107(2010), 053508-1-053508-8

Talut, G.; Reuther, H.; Grenzer, J.; Mücklich, A.; Shalimov, A.; Skorupa, W.; Stromberg, F.
Spinodal decomposition and secondary phase formation in Fe-oversaturated GaN
Physical Review B 81(2010), 155212

Rebohle, L.; Lehmann, J.; Prucnal, S.; Sunb, J. M.; Helm, M.; Skorupa, W.
Physical limitations of the electroluminescence mechanism in Terbium-based light emitters: Matrix and layer thickness dependence
Applied Physics B 98(2010)2, 439

Anwand, W.; Brauer, G.; Cowan, T. E.; Grambole, D.; Skorupa, W.; Cizek, J.; Kuriplach, J.; Prochazka, I.; Egger, W.; Sperr, P.
Structural characterization of H plasma-doped ZnO single crystals by positron annihilation spectroscopies
Physica Status Solidi (A) 207(2010), 2415-2425

Pécz, B.; Stoemenos, J.; Voelskow, M.; Skorupa, W.; Dobos, L.; Pongrácz, A.; Battistig, G.
Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas
Journal of Physics: Conference Series 209(2010), 012045-1-012045-2

Prucnal, S.; Rebohle, L.; Skorupa, W.
Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion.
Applied Physics B 98(2010)2-3, 451-454

Voelskow, M.; Kanjilal, A.; Skorupa, W.
Subsecond melt processing for achieving SiGe surface layers
Current Applied Physics 10(2010), 1309-1312


Contact

Dr. Wolfgang Skorupa
Head
w.skorupaAthzdr.de
Phone: +49 351 260 - 3612
Fax: 13612, 3411