Shaping of Co-Pt particles in an silicon oxide matrix during thermal treatment and ion irradiation

Fig. 1. Cross-sectional TEM bright-field image of an SiO₂ quartz glass sample implanted with cobalt and platinum followed by a thermal treatment at 1000 °C and an irradiation process with 4 MeV Si⁺ beam at 300 °C.

Fig. 2. Cross-sectional HAADF-STEM image with the EDXS analysis position marked by a red square.

Fig. 3. EDX spectrum of the position marked with a red square in Fig. 2. Besides cobalt and platinum from the particle, silicon and oxygen from the quartz substrate are detected.