Ion Implanter

Ion implantation is a method to impact impurity atoms in form of ions into a base material (doping) or to generate defects in semiconductor material (defect engineering, lifetime engineering). In this way, the material properties of the base material change (usually the electrical properties). The method is primarily used in semiconductor technology. Appropriate equipment for ion implantation are named ion implanters. Ion implantation service is available for partners from industry and can be used for for basic and applied research to modify surface-sensitive properties like adhesion, wear, roughness, hardness, corrosion of metal or other materials.

The ion beam center operates three ion implanters with 500 kV, 200 kV and 40 kV maximum acceleration voltage as well as facilities for plasma immersion ion implantation.

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500 kV Ion Implanter

	Supplier:	High Voltage Engineering Europa B.V., Model B8385
	Ion source:	IHC Bernas, gaseous and solid source feed
	Energy range:	10 - 500 keV (for singly charged ions)
	Scanning principle:	Twofold electrostatic
	Implantation chambers:	4

A detailed description of the implantation chambers at the 500 kV ion implanter can be found here.

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200 kV Ion Implanter

	Supplier:	Danfysik A/S, Denmark, Model 1090
	Ion source:	Hot filament, gaseous and solid source feed
	Energy range:	20 - 200 keV (for singly charged ions)
	Scanning principle:	Twofold magnetic / electrostatic (chamber 1/2)
	Implantation chambers:	2

A detailed description of the implantation chambers at the 200 kV ion implanter can be found here.

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40 kV Ion Implanter

	Supplier:	Danfysik A/S, Denmark, Model 1050
	Ion source:	Chordis, gaseous and solid source feed
	Energy range:	100 eV - 40 keV (for singly charged ions)
	Scanning principle:	Twofold electrostatic
	Implantation chambers:	1

A detailed description of the implantation chamber at the 40 kV ion implanter can be found here.