Contact

Ulrich Kentsch

u.kentschAthzdr.de
Phone: +49 351 260 3345

Ion Implanter

Ion implantation is a method to impact impurity atoms in form of ions into a base material (doping) or to generate defects in semiconductor material (defect engineering, lifetime engineering). In this way, the material properties of the base material change (usually the electrical properties). The method is primarily used in semiconductor technology. Appropriate equipment for ion implantation are named ion implanters. Ion implantation service is available for partners from industry and can be used for for basic and applied research to modify surface-sensitive properties like adhesion, wear, roughness, hardness, corrosion of metal or other materials.

The ion beam center operates ion implanters with 500 kV and 40 kV maximum acceleration voltage.

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500 kV Ion Implanter

The 500 kV ion implanter at the IBC. Supplier: High Voltage Engineering Europa B.V., Model B8385
Ion source: IHC Bernas, gaseous and solid source feed
Energy range: 10 - 500 keV (for singly charged ions)
Scanning principle: Twofold electrostatic
Implantation chambers: 4

A detailed description of the implantation chambers at the 500 kV ion implanter can be found here.

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40 kV Ion Implanter

The 40 kV ion implanter at the IBC. Supplier: Danfysik A/S, Denmark, Model 1050
Ion source: Chordis,
gaseous and solid source feed
Energy range: 100 eV - 40 keV (for singly charged ions)
Scanning principle: Twofold electrostatic
Implantation chambers: 1

A detailed description of the implantation chamber at the 40 kV ion implanter can be found here.


Contact

Ulrich Kentsch

u.kentschAthzdr.de
Phone: +49 351 260 3345