Contact

Dr. Matthias Krause

Head Nanomaterials and Transport
matthias.krauseAthzdr.de
Phone: +49 351 260 3578

orangener PfeilBachelor, Master, Diploma, and PhD Thesis from group Nanocomposites

Equipment Nanocomposite Materials

ClusterTool - Multifunctional UHV System


The ClusterTool offers excellent conditions to realize experiments and investigations for different materials systems. A major advantage of the setup is the ability to perform interdisciplinary multi-step experiments. In situ RBS, Raman, ERDA and Ellipsometry measurements allow detailed investigations of the materials structure and properties during annealing (up to 1000°C) without breaking the vacuum. Multi-step experiments involving thin film growth, annealing in vacuum or gas/plasma environments, surface and structure modification and ion beam analysis, provided by the 6 MV beamline of the Ion Beam Center at HZDR, can be performed at the ClusterTool.

contact:
Dr. M. Krause, matthias.krause@hzdr.de, 0351 / 260 - 3578

ClusterTool - Multifunctional UHV System

System Components Details
distribution chamber

  • radial distribution chamber with connection ports to surrounding vacuum chambers
Raman spectroscopy chamber
  • in situ Raman
  • laser wavelengths: 473 nm, 523 nm
  • sample heating up to 800°C
environmental chamber
  • simulation of different atmospheres, in situ ellipsometry and reflectometry 380-1680 nm
  • rotating compensator configuration
  • fast data acquisition: 1-5 sec/spectrum
  • spectral range:
  • M-2000V (QTH lamp): 1.24 - 3.3 eV
  • M-2000FI (Xe lamp): 0.73 - 5.9 eV
  • sample heating up to 800°C
sputtering chamber

  • sputtering deposition (2" targets)

  • plasma etching

  • plasma modification
  • sample heating up to 800°C
ion beam analysis chamber

  • in situ RBS measurements

  • in situ ERDA measurements
  • sample heating up to 800°C
storage chamber

  • sample storage in UHV

Ion Beam Sputtering / Ion Beam Assisted Deposition (IBS/IBAD) - Dual ion beam deposition

IBS/IBAD - Dual ion beam deposition
IBAD beam during deposition
  • 3 cm Kaufman ion source, ion energy 100-1200 eV
  • Plasma bridge neutralization of the sputtering beam
  • 3 cm assistant Kaufman source, ion energy 25-1200 eV
  • 6” target (selection of materials Ti,Ag,Ni,Co,Cr,Ge,Fe,Ta,Mo,Zr,Nb,Mn,C,SiO3,Si)
  • Growth rates 1-10 nm/min measurable by rate monitor
  • sample heating up to 600°C

DC Magnetron sputtering setup

Magnetron Sputtering
  • reactive/non-reactive sputtering
  • 3" heatable substrate holder
  • substrate XYZ-manipulator and heating option up to 600°C
  • process gas: Ar, Reactive gases: O2, N2, H2
  • plasma emmisson monitoring
  • 2" and 3" targets (selection of materials B,BN,Si,C,In,InSn,Sn,SnZn,Zn,Cu,Al,Cr,Ag,Mo,Al,V,Nb,Ti)

Nanoindenter UNAT from Asmec with Scratch Modul

Nanoindenter
  • mesurement range:1 mN - 1500 mN

Droplet Shape Analyzer Krüss DSA 25 - Contact angle measurement

Angle of contact measuring device
  • Determination of surface energies

Spectral photometer Solid Spec 3700DUV (Shimadzu)

Shimadzu SolidSpec3700
  • Direct detection unit, spectral range: 190-3300 nm (N2 purging: 165-3300 nm)
  • Integrating sphere (Spectralon): 200-2600 nm
  • Detectors: photomultiplier (165-1000 nm), PbS (700-1800 nm), InGaAs (1600-3300 nm)
  • Sample size (max): 4 cm x 50 cm x 70 cm
  • Precise measurements of transmittance and reflectance spectra
  • Reflectance from the strongly scattering surfaces

Ellipsometer (Woollam M-2000)

Ellipsometer (Woollam)
  • Fixed-angle illumination-detection geometry
  • rotating compensator
  • Wavelength range 211 nm to 1688 nm
  • evaluation software WVASE

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