Equipment Nanocomposite Materials

ClusterTool - Multifunctional UHV System -

The ClusterTool offers excellent conditions to realize experiments and investigations for different materials systems. A major advantage of the setup is the ability to perform interdisciplinary multi-step experiments. In situ RBS, Raman, ERDA and Ellipsometry measurements allow detailed investigations of the materials structure and properties during annealing (up to 1000°C) without breaking the vacuum. Multi-step experiments involving thin film growth, annealing in vacuum or gas/plasma environments, surface and structure modification and ion beam analysis, provided by the 6 MV beamline of the Ion Beam Center at HZDR, can be performed at the ClusterTool.

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contact:
Dr. M. Krause, matthias.krause@hzdr.de, 0351 / 260 - 3578

System Components	Details
Raman spectroscopy chamber	in situ Raman laser wavelength 473 nm; 523 nm sample heating up to 800°C
distrubution chamber	radial distribution chamber with connection ports to surrounding vacuum chambers
environmental chamber	simulation of different atmospheres , in situ ellipsometry and reflectometry 380-1680 nm rotating compensator configuration fast data acquisition: 1-5 sec/spectrum spectral range: M-2000V (QTH lamp): 1.24 - 3.3 eV M-2000FI (Xe lamp): 0.73 - 5.9 eV sample heating up to 800°C
sputtering chamber	sputtering deposition (2" targets) plasma etching plasma modification sample heating up to 800°C
UHV tribometer	force sensor with 1 mN and 10 mN oscillating and rotary drive different atmospheres sample heating up to 100°C
ion beam analysis chamber	in situ RBS measurements in situ ERDA measurements sample heating up to 800°C
storage chamber	sample storage in UHV

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Ion Beam Sputtering / Ion Beam Assisted Deposition (IBS/IBAD) - Dual ion beam deposition

	Details
	3 cm Kaufman ion source, ion energy 100-1200 eV Plasma bridge neutralization of the sputtering beam 3 cm assistant Kaufman source, ion energy 25-1200 eV 6” target (selection of materials Ti,Ag,Ni,Co,Cr,Ge,Fe,Ta,Mo,Zr,Nb,Mn,C,SiO3,Si) Growth rates 1-10 nm/min measurable by rate monitor sample heating up to 600°C

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High Power Impulse Magnetron sputtering setup (HiPIMS)

	Details
	3“ targets (selection of materials Ti,Mo,C,WC,Cu,Al,Mo,Zr,Ni,W) Super Imposed Pulse Power Supply, MELEC GmbH different modes possible: unipolar pulsing, bipolar pulsing rotatable sample holder

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DC Magnetron sputtering setup

	Details
	reactive/non-reactive sputtering 3" heatable substrate holder substrate XYZ-manipulator and heating option up to 600°C process gas: Ar, Reactive gases: O2, N2, H2 plasma emmisson monitoring 2" and 3" targets (selection of materials B,BN,Si,C,In,InSn,Sn,SnZn,Zn,Cu,Al,Cr,Ag,Mo,Al,V,Nb,Ti)

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Annealing chamber

	Details
	1" heatable substrate holder,temperatures up to 900 °C annealing atmospheres: Ar, O2, defined pressure in situ four point probe integrated for monitoring of electrical properties evolution during annealing of thin films

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Nanoindenter UNAT from Asmec with Scratch Modul

	Details
	mesurement range:1 mN-1500 mN

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Angle of contact measuring device Krüss DSA 10

	Details
	determine surface energy

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Solid Spec 3700DUV (Shimadzu)

	Details
	Spectral photometer: Direct detection unit, spectral range: 190-3300 nm (N2 purging: 165-3300 nm) Integrating sphere (Spectralon): 200-2600 nm Detectors: photomultiplier (165-1000 nm), PbS (700-1800 nm), InGaAs (1600-3300 nm) Sample size (max): 4 cm x 50 cm x 70 cm Application Precise measurements of transmittance and reflectance spectra Reflectance from the strongly scattering surfaces

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Ellipsometer (Woollam M-2000)

	Details
	Ellipsometer Fixed-angle illumination-detection geometry rotating compensator Wavelength range 211 nm to 1688 nm evaluation software WVASE

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