Quantum Photonics & Optoelectronics
Quantum Photonics:
The development of scalable quantum photonic integrated circuits (QPICs) is essential for the future of quantum communication, sensing, and computing. However, realizing on-chip quantum light sources and single-photon detectors in a silicon-based platform remains a fundamental challenge. Our research tackles this issue by integrating color centers in silicon as telecom-wavelength quantum emitters and leveraging chalcogen-implanted silicon avalanche photodiodes (APDs) for efficient single-photon detection.
By using ion implantation, annealing, and advanced lithographic techniques, we engineer and position these quantum defects within photonic structures, enabling their seamless integration with waveguides and resonators. This approach ensures compatibility with existing silicon photonics technology, paving the way for scalable, CMOS-compatible quantum architectures that can be deployed in large-scale optical networks.
Optoelectronics:
Our research focuses on harnessing group-IV semiconductors, such as silicon (Si) and germanium (Ge), to enable next-generation photonic technologies compatible with standard CMOS fabrication. By engineering Ge through Sn alloying, high-level n-type doping, and strain techniques, we transform it into a direct-bandgap material with emission in the short-wavelength infrared range.
In parallel, we enhance silicon’s infrared detection capabilities by introducing chalcogens at concentrations near their solid solubility limit. Using ion implantation followed by thermal treatments, we extend Si’s photoresponse to energies below its band gap, unlocking new possibilities for on-chip photonic integration and optical sensing.
Additionally, we explore plasmonic effects in group-IV semiconductors, leveraging highly doped Si and Ge to support tunable localized surface plasmons in the infrared range. This approach enables subwavelength light confinement and enhanced light-matter interaction, opening new avenues for integrated photonics and optoelectronic devices.
These advancements pave the way for high-performance, energy-efficient photonic devices seamlessly integrated with silicon microelectronics.
Team:
- PI: Yonder Berencén- Postdoc: Greg Wen
- Postdoc: Saif Mohd Shaik
- Postdoc: Yi Li
- Ph.D. student: Peiting Wen
- Ph.D. student: Guillermo Godoy-Pérez
- Ph.D. student: Alessandro Puddu
- Ph.D. student: Junchun Yang
Collaborators:
- Prof. Kambiz Jamshidi (TU Dresden)- Prof. Tim Schröder (Humboldt-Universität zu Berlin)
- Prof. Inga A. Fischer (Brandenburg University of Technology)
- Prof. Soren Stobbe (Technical University of Denmark)
- Prof. Ing-Song Yu (National Dong Hwa University / Taiwan)
Selected publications::
[1] Shaikh, M. S., et. al. A high-performance all-silicon photodetector enabling telecom-wavelength detection at room temperature, Under Review at Nature Photonics (2025). https://www.researchsquare.com/article/rs-5623025/v1
[2] Wen, S., et al, Optical spin readout of a silicon color center in the telecom L-band, Under Review at Nature Communication (2025). https://doi.org/10.48550/arXiv.2502.07632
[3] Wen, S., et al, Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques, Appl. Phys. Lett. 123, 081109 (2023)
[4] Hollenbach, M., et. al. Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nat Commun 13, 7683 (2022).
[5] Hollenbach, M., et. al. Engineering telecom single-photon emitters in silicon for scalable quantum photonics. Opt. Express 28, 26111-26121 (2020).
