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Open volume defects in annealed and ion irradiated SrTiO3 systems

Liedke, M. O.; Potzger, K.; Srinivasan, N.; Wagner, A.

The formation of vacancies in SrTiO3 due to annealing in vacuum [1] or low-energy ion irradiation [2] also leads to the modification of electronic properties that could be exploited in applications like resistivity switching. Here, we employ both these modification methods combined with in-situ defects evolution analysis by means of Doppler Broadening Positron Annihilation Spectroscopy (DB-PAS). Two reference SrTiO3 single crystals, undoped and Nb-doped have been investigated. Vacuum annealing of undoped SrTiO3 increases the defect concentration which can be attributed to the creation of oxygen and strontium vacancies close to the sample surface and deeper inside the substrate, respectively. Variable energy DB-PAS reveals the depth-dependent open volume defects concentration. Second, in-situ room and low temperature (about 165K) Ar+ irradiation has been utilized as a preliminary attempt to understand a vacancy migration process beneath the kinetical ion penetration depth. For that purpose, a frozen vacancy state is required, which could be achieved by lowering the system temperature below the vacancy activation energy. Although, that part of the experiment has been not entirely successful due to not low enough temperature realized during ion irradiation, however, a strong conclusion has been drawn about necessity of performing such type of experiments in-situ. A clear indication of oxygen deficiency at the sample surface due to ion irradiation, as found from DB-PAS is diminished after repeated ex-situ measurements.

Keywords: strontium titanate; annealing; PAS; Doppler broadening; AIDA

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Permalink: https://www.hzdr.de/publications/Publ-25027
Publ.-Id: 25027