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Strain distribution in GaAs/InxGa1-xAs core/shell nanowires grown by molecular beam epitaxy on Si(111) substrates

Balaghi, L.; Hübner, R.; Bussone, G.; Grifone, R.; Hlawacek, G.; Grenzer, J.; Schneider, H.; Helm, M.; Dimakis, E.

Strain distribution in GaAs/InxGa1-xAs core/shell nanowires grown by molecular beam epitaxy on Si(111) substrates

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    Workshop on Surface and Interface Diffraction in Condensed Matter Physics and Chemistry (CMPC), 09.-10.03.2017, DESY, Hamburg, Germany

Permalink: https://www.hzdr.de/publications/Publ-26656
Publ.-Id: 26656