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Pump – Probe THz Spectroscopy Study of Electronic Properties of Semiconductor Nanowires

Fotev, I.; Balaghi, L.; Shan, S.; Hübner, R.; Schmidt, J.; Schneider, H.; Helm, M.; Dimakis, E.; Pashkin, O.

THz radiation is a perfect tool for probing electrical properties of semiconductor nanostructures in a contactless way. When applied to semiconductor nanowires, THz probe pulses can drive the oscillations of photoexcited electrons and holes in the form of localized surface plasmon. We used optical pump – THz probe spectroscopy to study plasmonic response of charge carriers in GaAs/InₓGa₁₋ₓAs core/shell nanowires. The carrier lifetimes are about 80-100 ps, depending on the shell composition and the photoexcitation level, while the extracted mobilities reach 3700 cm²/V·s at room temperature.

Keywords: GaAs nanowires; terahertz spectroscopy; ultrafast dynamics; electron mobility; plasmon; carrier lifetime

  • Lecture (Conference)
    44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 01.-06.09.2019, Paris, France
  • Contribution to proceedings
    44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 01.-06.09.2019, Paris, France
    44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 153046
    DOI: 10.1109/IRMMW-THz.2019.8874068
    Cited 1 times in Scopus

Permalink: https://www.hzdr.de/publications/Publ-29706
Publ.-Id: 29706