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Abstract: Doping is one of the most important techniques in semiconductor technology since it allows adjusting a potential landscape within the device enabling desired device functionality.
However, with aggressive downscaling of transistor dimensions and the advent of novel materials realizing appropriate doping is not obvious. Therefore, alternatives to conventional doping are urgently required. For instance, employing gate electrodes instead of stationary dopants allows the dynamic adjustment of the functionality of the device and facilitates, e.g. reconfigurable field-effect transistors. We will show recent results on field-effect transistors based on multi-gate structures that allow, e.g., realizing device operation as n-type, p-type and as band-to-band tunneling field-effect transistor. Furthermore, doping with interface engineering approaches will be discussed.
Bio: Joachim Knoch studied physics at RWTH Aachen University, Germany and Queen Mary, University of London, UK and received the Diploma and PhD degrees in physics from RWTH Aachen University, Germany in 1998 and 2001. After postdoctoral research on InP HEMTs at the Microsystems Technology Laboratory, Massachusetts Institute of Technology, he joined the Research Center Jülich in Germany as a Research Scientist, where he investigated electronic transport in alternative field-effect transistors such as carbon nanotube FETs, ultrathin-body Schottky-barrier devices and band-to-band tunnel FETs. In December 2006 he accepted a position as permanent research staff member at IBM Zurich Research Laboratory, Switzerland, working on nanowire transistors with an emphasis on tunnel FETs. In September 2008 he was appointed associate professor of electrical engineering at TU Dortmund University, Germany and since May 2011 he has been full professor and head of the Institute of Semiconductor Electronics at RWTH Aachen University, Germany. His current research interests include investigations on electronic transport in device based on 2D materials, cryogenic electronics as well as photovoltaics.
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