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Title:
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FWI Institutskolloquium: Spin injection into Si and Ge with manganese-based ferromagnetic electrodes
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Category:
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Colloquium
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Begin:
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02.11.2017 10:30
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End:
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02.11.2017 12:00
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Speaker:
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PD Dr. Inga A. Fischer, Institute for Semiconductor Engineering/University of Stuttgart, Germany
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Contact:
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S. Prucnal
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Location:
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712/138 - Versammlungsraum
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Content:
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Abstract: Many device concepts utilizing spin-polarized carriers for logic applications require the injection of spin-polarized electrons into semiconductor channels. This can be achieved using ferromagnetic electrodes with or without a tunneling oxide barrier. The conductivity of the ferromagnetic metal Mn5Ge3 is comparable to that of highly doped Ge and its Curie temperature of ~300 K can be further increased by introducing C. Furthermore, the material can be fabricated by depositing Mn on Ge(111) and subsequent annealing, i.e. by a germanidation process which could potentially be compatible with complementary metal-oxide semiconductor (CMOS) fabrication processes. We present results on the characterization of Manganese-based electrodes and, using these electrodes as ferromagnetic contacts to bulk Ge as well as Si channels, discuss spin injection measurement results as well as future prospects.
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