Instrument

Functionality

Contact

OrsayFIB

HV-setup for focussed ion beams:

• LMAIS ion source: < 10 A/cm²
• kinetic energies: < 30 keV
• available ion species: Au, Si, Ge, Ga, Co, Nd, Cr, Er, Ni, …
• local implantations
• nanostructure preparation by focussed ion beams
• lateral resolution for Ga ions: 10 nm
• structure sizes < 50 µm

CANION FIB

HV-setup for focussed ion beams:

• LMAIS ion source: < 10 A/cm²
• kinetic energies: < 30 keV
• available ion species: Au, Si, Ge, Ga, Co, Nd, Cr, Er, Ni, …
• nanostructure preparation by focussed ion beams
• lateral resolution for Ga ions: 15 nm
• laser stage for positioning

Orion NanoFab

Helium ion microscope:

• Backscattering detector for TOF-SIMS
• Lateral resolution: 0.5 nm (He ions), 1.8 nm (Ne ions)
• Scanning transmission ion microscopy with position-sensitive detector
• Imaging with secondary electrons

NVision 40

HV-setup for focussed ion and electron beams:

• nanostructure preparation by focussed Ga ion beams
• lateral resolution FIB: 7 nm
• stage range: 100 mm
• deposition of C and Pt

Orion Plus

Helium ion microscope:

• nanostructure preparation by focussed He or Ne ion beams

• lateral resolution: He 0.5 nm, Ne 1.6 nm

• structure sizes ranging from nm to µm

HCI

UHV setup for highly charged ions:

• available ion species: Ne, Ar, Kr
• kinetic energy: 0.5q to 4.5q keV
• Ne, Ar, Kr implantations

LEI

HV-setup for low energy ion irradiation:

• Kaufman-type ion source
• Noble gas ions with kinetic energies of 200 to 1200 eV
• Ion induced surface nanopatterning
• 3 evaporator sources for deposition of metal thin films
• Polar incidence angles of 0° to 90°
• Sample heating up to 600°C

Instrument

Functionality

Contact

Olympus Ultra Objective

Atomic force microscope:

• Contact- or tapping-mode AFM
• Spreading resistance measurements
• max. scan area: 20 µm x 20 µm
• optical microscopy

Gregor Hlawacek⁽²¹⁾

Nico Klingner⁽²²⁾

Bruker Multimode 8 AFM

Atomic force microscope:

• Contact- or tapping-mode AFM
• Spreading resistance measurements (in preparation)
• 3D topography imaging with 7 nm lateral resolution
• max. scan area: 15 µm x 15 µm
• optical microscopy 

Omicron UHV AFM / STM

UHV atomic force / scanning transmission microscope:

• Contact- or non-nontact-mode AFM
• STM
• 3D topography imaging with < 1 nm lateral resolution
• max. scan area: 5 µm x 5 µm
• sample heating up to 600°C

Orion NanoFab

Helium ion microscope:

• Backscattering detector for TOF-SIMS
• Lateral resolution: 0.5 nm (He ions), 1.8 nm (Ne ions)
• Scanning transmission ion microscopy with position-sensitive detector
• Imaging with secondary electrons

Orion Plus

Helium ion microscope:

• Scanning transmission ion microscopy with position-sensitive detector
• Imaging with secondary electrons
• Backscattering detector
• Investigation of non-conductive samples enabled by charge compensation

NVision 40

HV-setup for focussed ion beams and electron beams:

• Lateral resolution SEM: 1.5 nm
• Stage range: 100 mm

NanoSAM

UHV-setup for electron microscopy:

• Scanning electron microscopy (SEM)
• Scanning Auger electron microscopy (SAM)

Instrument

Functionality

Contact

TestFIB

UHV-setup for LMAIS (Liquid Metal Alloy Ion Sources) characterization:

• Mass spectrometry
• Measurement of source energy distribution
• Kinetic ion energy < 10 keV

NVision 40

HV-setup for focussed ion beams and electron beams:

• Energy-dispersive X-ray spectroscopy (EDX)
• Electron backscattering diffraction (EBSD)

Orion NanoFab

Helium ion microscope:

• Backscattering detector for TOF-SIMS
• Lateral resolution: 0.5 nm (He ions), 1.8 nm (Ne ions)
• Scanning transmission ion microscopy with position-sensitive detector
• Imaging with secondary electrons

HCI

UHV setup for highly charged ions:

• available ion species: Ne, Ar, Kr
• kinetic energy: 0.5q to 4.5q keV
• charge states < q = 40 for Ar
• ion spectroscopy
• sample temperatures of -200°C to +1000°C

NanoSAM

UHV-setup for surface analytics:

• (Scanning) Auger electron spectroscopy (AES / SAM)
• X-ray photo-electron spectroscopy (XPS) (in preparation)
• cathodoluminescence (CL) (in preparation)
• depth profiling (in preparation)

Instrument

Functionality

Contact

Spot Welder

Spot welding device:

• Bonding of metal wires and sheets

Etching Setup

Etching setup:

• Electrochemical etching of tungsten tips for ion sources

Leica EM TXP

Mechanical preparation:

• Milling, sawing, grinding, polishing
• Preparations for light microscopy and electron microscopy etc.

ArBlade 5000 CTC

HV-device for ion beam milling:

• Unfocussed Ar-beam with kinetic energy of 0.1 to 8 keV
• Ion milling for surface smoothing/preparation of cross-sections
• Milling rates of up to 1 mm/hour

LMAIS Präparation

HV-device for LMAIS (Liquid Metal Alloy Ion Sources)

preparation:

• Cleaning and melting of alloys
• Wetting, filling, and functional testing