Contact

PD Dr. habil. Georgy Astakhov

Head Quantum Techno­logies
g.astakhov@hzdr.de
Phone: +49 351 260 3894

Quantum Technologies

Publications  

Preprints | 2024 | 2023 | 2022 | 2021| 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998

Preprints

142. Emitter-photomechanical interaction in high-Q hBN nanocavities
C. Qian, V. Villafañe, M. Schalk, G. V. Astakhov, U. Kentsch, M. Helm, P. Soubelet, A. V. Stier, J. J. Finley
arXiv:2210.00150

2024

141. Parametric magnon transduction to spin qubits
M. Bejarano, F. J. T. Goncalves, T. Hache, M. Hollenbach, C. Heins, T. Hula, L. Körber, J. Heinze, Y. Berencén, M. Helm, J. Fassbender, G. V. Astakhov, H. Schultheiss
Sci. Adv. 10, eadi2042 (2024) | arXiv:2208.09036

140. Ultralong-term high-density data storage with atomic defects in SiC
M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. V. Astakhov
Adv. Funct. Mater. (2024) | arXiv:2310.18843

139. Defects distribution and evolution in selected-area helium ion implanted 4H-SiC
Y. Song, Z. Xu, M. Rommel, G. V. Astakhov, G. Hlawacek, F. Fang
Ceram. Int. 50, 7691 (2024)

2023

138. Giant THz nonlinearity in topological and trivial HgTe-based heterosctructures
T. A. Uaman Svetikova, T. V. A. G. de Oliveira, A. Pashkin, A. Ponomaryov, C. Berger, L. Fürst, F. Bayer, E. G. Novik, H. Buhmann, L. W. Molenkamp, M. Helm, T. Kiessling, S. Winnerl, S. Kovalev, G. V. Astakhov
ACS Photon. 10, 3708 (2024)

137. Acoustically induced spin resonances of silicon-vacancy centers in 4H-SiC
T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G. V. Astakhov, P. V. Santos
Phys. Rev. Appl. 20, 034017 (2023) | arXiv:2212.07704

136. Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing
R. Rizzato, M. Schalk, S. Mohr, J. P. Leibold, J. C. Hermann, F. Bruckmaier, P. Ji, G. V. Astakhov, U. Kentsch, M. Helm, A. V. Stier, J. J. Finley, D. B. Bucher
Nat. Commun. 14, 5089 (2023) | arXiv:2212.12826

2022

135. Wafer-scale nanofabrication of telecom single-photon emitters in silicon
M. Hollenbach, N. Klingner, N. S. Jagtap, L. Bischoff, C. Fowley, U. Kentsch, G. Hlawacek, A. Erbe, N. V. Abrosimov, M. Helm, Y. Berencén, G. V. Astakhov
Nat. Commun. 13, 7683 (2022) | arXiv:2204.13173

134. Milliwatt terahertz harmonic generation from topological insulator metamaterials
K. J. Tielrooij, A. Principi, D. Saleta Reig, A. Block, S. Varghese, S. Schreyeck, K. Brunner, G. Karczewski, I. Ilyakov, A. Ponomaryov, T. V. A. G. de Oliveira, M. Chen, J. C. Deinert, C. Gomez Carbonell, S. O. Valenzuela, L. W. Molenkamp, T. Kiessling, G. V. Astakhov, S. Kovalev
Light Sci App 11, 315 (2022) | arXiv:2211.00465

133. Unveiling the zero-phonon line of the boron vacancy center by cavity enhanced emission
C. Qian, V. Villafañe, M. Schalk, G. V. Astakhov, U. Kentsch, M. Helm, P. Soubelet, N. P. Wilson, R. Rizzato, S. Mohr, D. B. Bucher, A. V. Stier, J. J. Finley
Nano Lett. 22, 5137 (2022) | arXiv:2202.10980

132. Metal-assisted chemically etched silicon nanopillars hosting telecom photon emitters
M. Hollenbach, N. S. Jagtap, C. Fowley, J. Baratech, V. Guardia-Arce, U. Kentsch, A. Eichler-Volf, N. V. Abrosimov, A. Erbe, C. H. Shin, H. Kim, M. Helm, W. Lee, G. V. Astakhov, Y. Berencén
J Appl. Phys. 132, 033101 (2022) | arXiv:2112.02680

131. Superradiance of spin defects in silicon carbide for maser applications
A. Gottscholl, M. Wagenhöfer, M. Klimmer, S. Scherbel, C. Kasper, V. Baianov, G. V. Astakhov, V. Dyakonov, A. Sperlich
Front. Photon 3, 886354 (2022) | arXiv:2203.00329

130. Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
I. D. Breev, Z. Shang, A. V. Poshakinskiy, H. Singh, Y. Berencen, M. Hollenbach, S. S. Nagalyuk, E. N. Mokhov, R. A. Babunts, P. G. Baranov, D. Suter, S. A. Tarasenko, G. V. Astakhov, A. N. Anisimov
npj Quant. Inf. 8, 23 (2022) | arXiv:2107.06989

129. Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
C. Babin, R. Stöhr, N. Morioka, T. Linkewitz, T. Steidl, R. Wörnle, D. Liu, E. Hesselmeier, V. Vorobyov, A. Denisenko, M. Hentschel, C. Gobert, P. Berwian, G. V. Astakhov, W. Knolle, S. Majety, P. Saha, M. Radulaski, N. T. Son, J. Ul-Hassan, F. Kaiser, J. Wrachtrup
Nat. Mater. 21, 67 (2022) | arXiv:2109.04737

2021

128. Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC
I. D. Breev, K. V. Likhachev, V. V. Yakovleva, I. P. Veishtort, A. M. Skomorokhov, S. S. Nagalyuk, E. N. Mokhov, G. V. Astakhov, P. G. Baranov, A. N. Anisimov
JETP Lett. 114, 274 (2021)

127. Acoustically induced coherent spin trapping
A. Hernandez-Minguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov
Sci. Adv. 7, eabj5030 (2021) | arXiv:2104.03011

126. Mapping the stray fields of a micromagnet using spin centers in SiC
M. Bejarano, F. J. T. Goncalves, M. Hollenbach, T. Hache, T. Hula, Y. Berencen, J. Fassbender, M. Helm, G. V. Astakhov, H. Schultheiss
IEEE Magn. Lett. 12, 8100605 (2021) | arXiv:2009.00347

125. Microwave-assisted spectroscopy of vacancy-related spin centers in hexagonal SiC
Z. Shang, Y. Berencen, M. Hollenbach, S. Zhou, H. Kraus, T. Ohshima, G. V. Astakhov
Phys. Rev. Appl. 15, 034059 (2021)

124. Stress-controlled zero-field splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva, S. S. Nagalyuk, E. N. Mokhov, R. Huebner, G. V. Astakhov, P. G. Baranov, A. N. Anisimov
Appl. Phys. Lett. 118, 084003 (2021) | arXiv:2012.07588

123. Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
I. D. Breev, K. V. Likhachev, V. V. Yakovleva, R. Huebner, G. V. Astakhov, P. G. Baranov, E. N. Mokhov, A. N. Anisimov
J. Appl. Phys. 129, 055304 (2021) | arXiv:2011.13693

2020

122. Photoluminescence and Raman spectroscopy study on color centers of helium ion implanted 4H-SiC
Y. Song, Z. Xu, R. Li, H. Wang, Y. Fan, M. Rommel, J. Liu, G. V. Astakhov, G. Hlawacek, B. Li, J. Xu, F. Fang
Nanomanuf. Metrol. 3, 205 (2020)

121. Anisotropic spin-acoustic resonance in silicon carbide at room temperature
A. Hernandez-Minguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov
Phys. Rev. Lett. 125, 107702 (2020) | arXiv:2005.00787

120. Engineering telecom single-photon emitter in silicon for scalable quantum photonics
M. Hollenbach, Y. Berencen, U. Kentsch, M. Helm, G. V. Astakhov
Opt. Express 28, 26111 (2020) | arXiv:2008.09425

119. Local vibrational modes of Si vacancy spin qubits in SiC
Z. Shang, A. Hashemi, Y. Berencen, H.-P. Komsa, P. Erhart, S. Zhou, M. Helm, A. V. Krasheninnikov, G. V. Astakhov
Phys. Rev. B 101, 144109 (2020) | arXiv:2002.00067

118. Influence of irradiation on defect spin coherence in silicon carbide
C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Gottscholl, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, G. V. Astakhov
Phys. Rev. Appl. 13, 044054 (2020) | arXiv:1908.06829

2019

117. Optically detected spin-mechanical resonance in silicon carbide membranes
A. V. Poshakinskiy and G. V. Astakhov
Phys. Rev. B 100, 094104 (2019) | arXiv:1903.00876

116. Excitation and coherent control of spin qudit modes in silicon carbide at room temperature
V. A. Soltamov, C. Kasper, A. V. Poshakinskiy, A. N. Anisimov, E. N. Mokhov, A. Sperlich, S. A. Tarasenko, P. G. Baranov, G. V. Astakhov, V. Dyakonov
Nat. Commun. 10, 1678 (2019) | arXiv:1807.10383

2018

115. Defects for quantum information processing in SiC (Book chapter)
G. V. Astakhov and V. Dyakonov
Defects in Advanced Electronic Materials and Novel Low Dimensional Structures, ed. J. Stehr, I. Buyanova and W. Chen
Woodhead Publishing Series in Electronic and Optical Materials. 2018 Elsevier

114. Spin colour centres in SiC as a material platform for sensing and information processing at ambient conditions
A. Anisimov, V. Soltamov, P. Baranov, G. Astakhov, V. Dyakonov
EPJ Web Conf. 190, 04001 (2018)

113. All-optical quantum thermometry based on spin-level cross-relaxation and multicenter entanglement under ambient conditions in SiC
A. N. Anisimov, V. A. Soltamov, I. D. Breev, R. A. Babunts, E. N. Mokhov, G. V. Astakhov, V. Dyakonov, D. R. Yakovlev, D. Suter, P. G. Baranov
AIP Advances 8, 085304 (2018)

112. Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications
T. Ohshima, T. Satoh, H. Kraus, G. V. Astakhov, V. Dyakonov , P. G. Baranov
J. Phys. D: Appl. Phys. 51, 333002 (2018)

111. Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
M. Fischer, A. Sperlich, H. Kraus, T. Ohshima, G. V. Astakhov, V. Dyakonov
Phys. Rev. Appl. 9, 054006 (2018) | arXiv:1709.00052

110. Room-temperature level anticrossing and cross-relaxation spectroscopy of spin color centers in SiC single crystals and nanostructures
A. N. Anisimov, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, G. V. Astakhov, V. Dyakonov
Appl. Magn. Reson. 49, 85 (2018)

2017

109. Spin and optical properties of silicon vacancies in silicon carbide – a review
S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, G. V. Astakhov
Phys. Status Solidi B 225, 1700258 (2017) | arXiv:1707.05503
Cover page

108. Impact of interfaces and laser repetition rate on photocarrier dynamics in lead halide perovskites
L. G. Kudriashova, D. Kiermasch, P. Rieder, M. Campbell, K. Tvingstedt, A. Baumann, G. V. Astakhov, V. Dyakonov
J. Phys. Chem. Lett. 8, 4698 (2017)

107. Creation and functionalization of defects in SiC by proton beam writing
T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
Materials Science Forum 897, 233 (2017)

106. Observation of the universal magnetoelectric effect in a 3D topological insulator
V. Dziom, A. Shuvaev, A. Pimenov, G. V. Astakhov, C. Ames, K. Bendias, J. Böttcher, G. Tkachov, E. M. Hankiewicz, C. Brüne, H. Buhmann, L. W. Molenkamp
Nat. Commun. 8, 15197 (2017) | arXiv:1603.05482

105. Three-dimensional proton beam writing of optically active coherent vacancy spins in silicon carbide
H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
Nano Lett. 17, 2865 (2017)

104. Locking of electron spin coherence above 20 ms in natural silicon carbide
D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov
Phys. Rev. B 95, 161201(R) (2017) | arXiv:1602.05775

2016

103. All-optical thermometry based on level anticrossing in silicon carbide
A. N. Anisimov, D. Simin, V. A. Soltamov, S. P. Lebedev, P. G. Baranov, G. V. Astakhov, V. Dyakonov
Sci. Rep. 6, 33301 (2016) | arXiv:1609.06451

102. An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon
A. N. Anisimov, D. O. Tolmachev, R. A. Babunts, M. V. Muzafarova, A. P. Bundakova, I. V. Il’in V. A. Soltamov, P. G. Baranov, E. N. Mokhov, G. V. Astakhov, V. Dyakonov
Tech. Phys. Lett. 42, 618 (2016)

101. Spin centers in SiC for quantum technologies
G. V. Astakhov, D. Simin, V. Dyakonov, B. V. Yavkin, S. B. Orlinskii, I. I. Proskuryakov, A. N. Anisimov, V. A. Soltamov, P. G. Baranov
Appl. Magn. Res. 47, 793 (2016)

100. All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
D. Simin, V. A. Soltamov, A. V. Poshakinskiy, A. N. Anisimov, R. A. Babunts, D. O. Tolmachev, E. N. Mokhov, M. Trupke, S. A. Tarasenko, A. Sperlich, P. G. Baranov, V. Dyakonov, G. V. Astakhov
Phys. Rev. X 6, 031014 (2016) | arXiv:1511.04663

99. Symmetry properties of n-doped (Cd,Mn)Te quantum well photoluminescence spectra: an exemplary evidence for anisotropy-induced valence-band mixing
A. V. Koudinov, C. Kehl, G. Astakhov, J. Geurts, T. Wojtocicz, G. Karczewski
Appl. Phys. Lett. 108, 191113 (2016) | arXiv:1510.08644

2015

98. Optical power-driven electron spin relaxation regime crossover in Mn-doped bulk GaAs
F. Münzhuber, T. Kiessling, W. Ossau, L. W. Molenkamp, G. V. Astakhov
Phys. Rev. B 92, 115208 (2015)

97. High-precision angle-resolved magnetometry with uniaxial quantum centers in silicon carbide
D. Simin, F. Fuchs, H. Kraus, A. Sperlich, P. G. Baranov, G. V. Astakhov, V. Dyakonov
Phys. Rev. Appl. 4, 014009 (2015) | arXiv:1505.00176

96. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
F. Fuchs, B. Stender, D. Simin, M. Trupke, J. Pflaum, V. Dyakonov, G. V. Astakhov
Nat. Commun. 6, 7578 (2015) | arXiv:1407.7065

95. Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature
V. A. Soltamov, D. O. Tolmachev, I. V. Il’in, G. V. Astakhov, V. V. Dyakonov, A. A. Soltamova, P. G. Baranov
Phys. Solid State 57, 891 (2015)
Russian: Физика Твердого Тела 57, 877 (2015)

94. Atomic-scale defects in silicon carbide for quantum sensing applications
V. Dyakonov, H. Kraus, V. A. Soltamov, F. Fuchs, D. Simin, S. Vaeth, A. Sperlich, P. Baranov, G. Astakhov
Materials Science Forum 821-823, 355 (2015)

2014

93. Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
A. Muzha, F. Fuchs, N. V. Tarakina, M. Trupke, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, A. Krueger, and G. V. Astakhov
Appl. Phys. Lett. 105, 243112 (2014) | arXiv:1409.0756

92. Exciton decay dynamics controlled by impurity occupation in strongly Mn-doped and partially compensated bulk GaAs
F. Münzhuber, T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, B. Gieseking, G. V. Astakhov, V. Dyakonov
Phys. Rev. B 90, 125203 (2014)

91. Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
H. Kraus, V. A. Soltamov, F. Fuchs, D. Simin, A. Sperlich, P. G. Baranov, G. V. Astakhov, V. Dyakonov
Sci. Rep. 4, 5303 (2014) | arXiv:1403.7741

90. Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
T. C. Hain, F. Fuchs, V. A. Soltamov, P. G. Baranov, G. V. Astakhov, T. Hertel, V. Dyakonov
J. Appl. Phys. 115, 133508 (2014) | arXiv:1403.2399

89. Room temperature quantum microwave emitters based on spin defects in silicon carbide
H. Kraus, V. A. Soltamov, D. Riedel, S. Väth, F. Fuchs, A. Sperlich, P. G. Baranov, V. Dyakonov, G. V. Astakhov
Nat. Phys. 10, 157 (2014)
Highlights:
Optical materials: Silicon carbide goes quantum

2013

88. Room temperature electrically tunable terahertz Faraday effect
A. M. Shuvaev, A. Pimenov, G. V. Astakhov*, M. Mühlbauer, C. Brüne, H. Buhmann, L. W. Molenkamp
Appl. Phys. Lett. 102, 241902 (2013) | arXiv:1211.5569

87. Terahertz quantum Hall effect of Dirac fermions in a topological insulator
A. M. Shuvaev, G. V. Astakhov, G. Tkachov, C. Brüne, H. Buhmann, L. W. Molenkamp, A. Pimenov
Phys. Rev. B 87, 121104(R) (2013) | arXiv:1208.1115

86. Silicon carbide light-emitting diode as a prospective room temperature source for single photons
F. Fuchs, V. A. Soltamov, S. Väth, A. Sperlich, P. G. Baranov, E. N. Mokhov, G. V. Astakhov, V. Dyakonov
Sci. Rep. 3, 1637 (2013) | arXiv:1212.2989

85. Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states
P. G. Baranov, V. A. Soltamov, V. A. Soltamov, G. V. Astakhov, V. Dyakonov
Materials Science Forum 740-742, 425 (2013) | arXiv:1301.1913

2012

84. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
D. Riedel, F. Fuchs, H. Kraus, S. Väth, A. Sperlich, V. Dyakonov, A. A. Soltamova, P. G. Baranov, V. A. Ilyin, G. V. Astakhov
Phys. Rev. Lett. 109, 226402 (2012) | arXiv:1210.0505

83. Terahertz magneto-optical spectroscopy in HgTe thin films
A. M. Shuvaev, G. V. Astakhov, C. Brüne, H. Buhmann, L. W. Molenkamp, A. Pimenov
Semicond. Sci. Technol. 27, 124004 (2012)

2011

82. Surface state charge dynamics of a high-mobility three dimensional topological insulator
J. Hancock, J. L. M. van Mechelen, A. B. Kuzmenko, D. van der Marel, C. Brüne, E. G. Novik, G. V. Astakhov, H. Buhmann, L. W. Molenkamp
Phys. Rev. Lett. 107, 136803 (2011)

81. Induced magnetic anisotropy in lifted (Ga,Mn)As thin films
F. Greullet, L. Ebel, F. Münzhuber, S. Mark, G. V. Astakhov, T. Kießling, C. Schumacher, C. Gould, W. Ossau, K. Brunner, W. Ossau, L. W. Molenkamp
Appl. Phys. Lett. 98, 231903 (2011)

80. Giant magneto-optical Faraday effect in HgTe thin films in the terahertz spectral range
A. M. Shuvaev, G. V. Astakhov, A. Pimenov, C. Brüne, H. Buhmann, L. W. Molenkamp
Phys. Rev. Lett. 106, 107404 (2011)
Editors’ Suggestion

79. Nonthermal photocoercivity effect in low-doped (Ga,Mn)As ferromagnetic semiconductor
T. Kiessling, G. V. Astakhov, H. Hoffmann, V. L. Korenev, J. Schwittek, G. M. Schott, C. Gould, W. Ossau, K. Brunner, L. W. Molenkamp
Proc. 30th International Conference on the Physics of Semiconductors, Seoul, Korea (2010).
AIP Conference Proceeding Series, 1399 (2011).

78. Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence
D. M. Zayachuk, T. Slobodskyy, G. V. Astakhov, C. Gould, G. Schmidt, W. Ossau, L. W. Molenkamp
Phys. Rev. B 83, 085308 (2011)

77. Photo-induced Barkhausen effect in the ferromagnetic semiconductor (Ga,Mn)As
G. V. Astakhov, J. Schwittek, G. M. Schott, C. Gould, W. Ossau, K. Brunner, L. W. Molenkamp
Phys. Rev. Lett. 104, 037204 (2011)

76. Spin relaxation in GaAs doped with magnetic (Mn) atoms
I. A Akimov, G. V. Astakhov, R. I. Dzhioev, K. V. Kavokin, V. I. Korenev, Yu. G. Kusrayev, D. R. Yakovlev, M. Bayer, L. W. Molenkamp
Solid State Phenomena 168-169, 47 (2011)

2010

75. Single pJ-pulse switching of magnetization in ferromagnetic (Ga,Mn)As
A. H. M. Reid, G. V. Astakhov, A. V. Kimel, G. M. Schott, W. Ossau, K. Brunner, A. Kirilyuk, L. W. Molenkamp, Th. Rasing
Appl. Phys. Lett. 97, 232503 (2010)

74. Interaction between Mn ions and free carriers in quantum wells with asymmetrical semimagnetic barriers
D. M. Zayachuk, T. Slobodskyy, G. V. Astakhov, C. Gould, G. Schmidt, W. Ossau, L. W. Molenkamp
Eur. Phys. Lett. 91, 67007 (2010)

2009

73. Observation of the magnetic soft mode in (Cd,Mn)Te quantum wells using spin-flip Raman scattering
C. Kehl, G. V. Astakhov, K. V. Kavokin, Yu. G. Kusrayev, W. Ossau, G. Karczewski, T. Wojtowicz, J. Geurts
Phys. Rev. B 80, 241203(R) (2009)

72. Investigation of spin transport in semiconductors by spatially resolved two-color Hanle-MOKE measurements
W. Ossau, J.-H. Quast, G. V. Astakhov, H. Hoffmann, L. W. Molenkamp
Int. J. of Mod. Phys. B 23, 2760 (2009)

71. Influence of light on spin diffusion in weak magnetic fields
J.-H. Quast, G. V. Astakhov, W. Ossau, L. W. Molenkamp, J. Heinrich, S. Höfling, A. Forchel
Phys. Rev. B 79, 245207 (2009)

70. Nonthermal photocoercivity effect in a low-doped (Ga,Mn)As ferromagnetic semiconductor
G. V. Astakhov, H. Hoffmann, V. L. Korenev, T. Kiessling, J. Schwittek, G. M. Schott, C. Gould, W. Ossau, K. Brunner, L. W. Molenkamp
Phys. Rev. Lett. 102, 187401 (2009)

2008

69. Lateral spin diffusion probed by two-color Hanle-MOKE technique
J.-H. Quast, G. V. Astakhov, W. Ossau, L. W. Molenkamp, J. Heinrich, S. Höfling, A. Forchel
Acta Physica Polonica A 114, 1311 (2008)

68. Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells
G. V. Astakhov, M. M. Glazov, D. R. Yakovlev, E. A. Zhukov, W. Ossau, L. W. Molenkamp, M. Bayer
Semicond. Sci. Technol. 23, 114001 (2008)

67. Suppression of electron spin relaxation in Mn-doped GaAs
G. V. Astakhov, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, M. N. Tkachuk, Yu. G. Kusrayev, T. Kiessling, W. Ossau, L. W. Molenkamp
Phys. Rev. Lett 101, 076602 (2008)

66. Bound magnetic polarons in the very dilute regime
Yu. G. Kusrayev, K. V. Kavokin, G. V. Astakhov*, W. Ossau, L. W. Molenkamp
Phys. Rev. B 77, 085205 (2008)

2007

65. Influence of liquid-phase synthesis parameters on particle sizes and structural properties of nanocrystalline ZnO powders
C. Chory, R. B. Neder, V. I. Korsunskiy, F. Niederdraenk, C. Kumpf, E. Umbach, M. Schumm, M. Lentze, J. Geurts, G. Astakhov, W. Ossau, and G. Müller
Phys. Stat. Sol. (c) 4, 3260 (2007)

64. CdSe/ZnSe heteroepitaxy: Aspects of growth and self organization of nanostructures
S. Mahapatra, T. Kiessling, E. Margapoti, G. V. Astakhov, J. Renner, U. Bass, C. Bougerol, T. Schmidt, A. Bendounan, F. Schmitt, C. Schumacher, L. Worschech, W. Ossau, J. Geurts, L. W. Molenkamp, F. Reinert, A. Forchel, K. Brunner
Phys. Stat. Sol. (c) 4, 3129 (2007)

63. Optical studies of structural and magnetic anisotropies in epitaxial CdSe/ZnSe quantum dots
T. Kiessling, G. V. Astakhov, A. V. Platonov, S. Mahapatra, T. Slobodskyy, W. Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp
Phys. Stat. Sol. (c) 4, 3324 (2007)

62. Magneto-optics of modulation doped quantum wells based on II-VI semiconductor compounds
G. V. Astakhov and W. Ossau
Phys. Stat. Sol. (c) 4, 3310 (2007)

61. Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy
S. Mahapatra, T. Kiessling, E. Margapoti, G. V. Astakhov, W. Ossau, L. Worschech, A. Forchel, K. Brunner
J. Crystal Growth 301-302, 310 (2007)

60. Exciton spin decay modified by strong electron-hole exchange interaction
G. V. Astakhov, A. V. Koudinov, K. V. Kavokin, I. S. Gagis, Yu. G. Kusrayev, W. Ossau, L. W. Molenkamp
Phys. Rev. Lett 99, 016601 (2007)

59. Laser controlled magnetization in bulk Zn1-xMnxTe
Le Van Khoi, A. Avdonin, R. R. Galazka, M. Lentze, C. Kehl, J. Geurts, M. Eyring, G. Astakhov, W. Ossau
Phys. Stat. Sol. (b) 244, 1680 (2007)

2006

58. Optical spin pumping of modulation doped electrons probed by a two-color Kerr rotation technique
H. Hoffmann, G. V. Astakhov, T. Kiessling, W. Ossau, G. Karczewski, T. Wojtowicz, J. Kossut, L. W. Molenkamp
Phys. Rev. B 74, 073407 (2006)

57. Formation mechanism and properties of CdSe quantum dots on ZnSe by low temperature epitaxy and in situ annealing
S. Mahapatra, T. Kiessling, E. Margapoti, G. V. Astakhov, W. Ossau, L. Worschech, A. Forchel, K. Brunner
Appl. Phys. Lett. 89, 043102 (2006)

56. Anomalous in-plane magneto-optical anisotropy of self-assembled quantum dots
T. Kiessling, A. V. Platonov, G. V. Astakhov, T. Slobodskyy, S. Mahapatra, W Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp
Phys. Rev. B 74, 041301(R) (2006)

55. Anomalous in-plane magneto-optical anisotropy of self-assembled quantum dots
A. V. Platonov, T. Kiessling, G. V. Astakhov, T. Slobodskyy, S. Mahapatra, W Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp
Proc. Nanostructures: Physics and Technology, 14th International Symposium, St.Petersburg, Russia, pp.146-147 (2006)

54. Phonon replica fine structure in CdSe/ZnSe quantum dots
T. Kiessling, A. V. Platonov, G. V. Astakhov, S. Mahapatra, T. Slobodskyy, W Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp
Proc. Nanostructures: Physics and Technology, 14th International Symposium, St.Petersburg, Russia. pp. 269-270 (2006)

53. Comparative study of self-assembled CdSe/ZnSe quantum dots grown by variants of conventional MBE
S. Mahapatra, K. Brunner, C. Schumacher, T. Kiessling, G. V. Astakhov, U. Bass, E. Margapoti, W. Ossau, J. Geurts, L. Worschech, A. Forchel, L. W. Molenkamp
Phys. Stat. Sol. (c) 3, 928 (2006)

52. Energy relaxation in CdSe/ZnSe quantum dots under the strong exciton-phonon coupling regime
A. V. Platonov, T. Kiessling, G. V. Astakhov, A. A. Maksimov, A. V. Larionov, D. R. Yakovlev, T. Slobodskyy, S. Mahapatra, W. Ossau, G. Schmidt, K. Brunner, M. Bayer, L. W. Molenkamp
Phys. Stat. Sol. (c) 3, 924 (2006)

51. Optical anisotropy of CdSe/ZnSe quantum dots
T. Kiessling, G. V. Astakhov, A. V. Platonov, T. Slobodskyy, S. Mahapatra, W. Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp
Phys. Stat. Sol. (c) 3, 912-915 (2006)

50. Circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots
G. V. Astakhov, T. Kiessling, A. V. Platonov, T. Slobodskyy, S. Mahapatra, W. Ossau, G. Schmidt, K. Brunner, L. W. Molenkamp
Phys. Rev. Lett. 96, 027402 (2006)

49. Nanosecond spin memory of electrons in CdTe/CdMgTe quantum wells
G. V. Astakhov, T. Kiessling, D. R. Yakovlev, E. A. Zhukov, M. Bayer, W. Ossau, B. P. Zakharchenya, G. Karczewski, T. Wojtowicz, J. Kossut
Phys. Stat. Sol. (b) 243, 858 (2006)

2005

48. Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells
D. Keller, D. R. Yakovlev, G. V. Astakhov, W. Ossau, S. A. Crooker, T. Slobodskyy, A. Waag, G. Schmidt, L. W. Molenkamp
Phys. Rev. B 72, 235306 (2005)

47. CdSe/ZnSe quantum dots formed by low temperature epitaxy and in-situ annealing: properties and growth optimization
S. Mahaparta, C. Schumacher, T. Kiessling, G. V. Astakhov, U. Bass, W. Ossau, J. Geurts, K. Brunner
Acta Physica Polonica A 108, 769 (2005)

46. Universal estimation of X- trion binding energy in semiconductor quantum wells
R.A. Sergeev, R.A. Suris, G.V. Astakhov, W. Ossau, D.R. Yakovlev
Eur. Phys. J. B 47, 541 (2005)

45. Simple estimation of X- trion binding energy in semiconductor quantum wells
R.A. Sergeev, R.A. Suris, G.V. Astakhov, W. Ossau, D.R. Yakovlev
Proc. Nanostructures: Physics and Technology, 13th International Symposium, St.Petersburg, Russia, pp.356-357 (2005)

44. Observation of giant magnetic linear dichroism in (Ga,Mn)As
A.V. Kimel, G.V. Astakhov, A. Kirilyuk, G.M. Schott, G. Karczewski, W. Ossau, G. Schmidt, L.W. Molenkamp, Th. Rasing
Phys. Rev. Lett. 94, 227203 (2005)

43. Definitive observation of the dark triplet ground state of charged excitons in high magnetic fields
G.V. Astakhov, D.R. Yakovlev, V.V. Rudenkov, P.C.M. Christianen, T. Barrick, S.A. Crooker, A.B. Dzyubenko, W. Ossau, J.C. Maan, G. Karczewski, T. Wojtowicz
Phys. Rev. B 71, 201312(R) (2005)

42. Magnetization manipulation in (Ga,Mn)As by sub-picosecond optical excitation
G.V. Astakhov, A.V. Kimel, G.M. Schott, A.A. Tsvetkov, A. Kirilyuk, D.R. Yakovlev, G. Karczewski, W. Ossau, G. Schmidt, L.W. Molenkamp, Th. Rasing
Appl. Phys. Lett. 86, 152506 (2005)

2004

41. Ultrafast and steady-state magneto-optics of ferromagnetic GaMnAs semiconductor
G.V. Astakhov, A.V. Kimel, G.M. Schott, A. Kirilyuk, D.R. Yakovlev, G. Karczewski, A.A. Tsvetkov, W. Ossau, G. Schmidt, L.W. Molenkamp, Th. Rasing
Proc. Nanostructures: Physics and Technology, 12th International Symposium, St.Petersburg, Russia, pp.30-31 (2004)

40. Picosecond dynamics of the photo-induced spin polarization in epitaxial (Ga,Mn)As films
A.V. Kimel, G.V. Astakhov, G.M. Schott, A. Kirilyuk, D.R. Yakovlev, G. Karczewski, W. Ossau, G. Schmidt, L.W. Molenkamp, Th. Rasing
Phys. Rev. Lett. 92, 237203 (2004)

39. Identification of singlet and triplet states of negatively charged excitons in CdTe-based quantum wells
G.V. Astakhov, D.R. Yakovlev, S.A. Crooker, W. Ossau, P.C.M.Christianen, V.V. Rudenkov, G. Karczewski, T. Wojtowicz, J. Kossut
Phys. Stat. Sol. (c) 1, 551 (2004)

2003

38. Combined exciton-electron optical processes in optical spectra of modulation doped QWs
V.P. Kochereshko, D.R.Yakovlev, R.A. Suris, G.V. Astakhov, W. Faschinger, W.Ossau, G. Landwehr, T. Wojtowicz, G. Karczewski, J. Kossut
Proc. Optical properties of 2D systems with interacting electrons, pp.125-136. NATO series book, Vol.119 (II. Mathematics Physics and Chemistry), ed. by W.J.Ossau and R.Suris, Kluwer Academic Pablishers, (2003)

37. II-VI quantum wells with high carrier densities and in high magnetic fields
D.R.Yakovlev, G.V.Astakhov, W.Ossau, S.A.Crooker, A.Waag
Proc. Optical properties of 2D systems with interacting electrons, pp.137-150. NATO series book, Vol.119 (II. Mathematics Physics and Chemistry), ed. by W.J.Ossau and R.Suris, Kluwer Academic Pablishers, (2003)

36. Positively and negatively charged trions in ZnSe-based quantum wells
W.Ossau, G.V.Astakhov, D.R.Yakovlev, V.P.Kochereshko, J.Puls, F.Henneberger S.A.Crooker, Q.McCulloch, N.A.Gippius, W.Faschinger, A.Waag
Proc. Optical properties of 2D systems with interacting electrons, pp.41-62. NATO series book, Vol.119 (II. Mathematics Physics and Chemistry), ed. by W.J.Ossau and R.Suris, Kluwer Academic Pablishers, (2003)

35. Optical studies of spin polarized 2DEG in modulation-doped ZnMnSe/ZnBeSe quantum wells in high magnetic fields
D.Keller, G.V.Astakhov, D.R.Yakovlev, S.A.Crooker, L.Hansen, and W.Ossau
Proc. Optical properties of 2D systems with interacting electrons, pp.217-232. NATO series book, Vol.119 (II. Mathematics Physics and Chemistry), ed. by W.J.Ossau and R.Suris, Kluwer Academic Pablishers, (2003)

34. Combined exciton-electron optical processes in optical spectra of modulation doped QWs
V.P.Kochereshko, G.V.Astakhov, D.R.Yakovlev, W.Ossau, G.Landwehr, W.Faschinger, T.Wojtowicz, G.Karczewski, J.Kossut
Physica E 17, 197 (2003)

2002

33. Combined exciton-electron optical processes in modulation doped QWs
V.P.Kochereshko, D.R.Yakovlev, G.V.Astakhov, W.Faschinger, W.Ossau, G.Landwehr, T.Wojtowicz, G.Karczewski, J.Kossut
Proc. 26th International Conference on the Physics of Semiconductors. Conference series numer 171, Edited by A.R.Long and J.H.Davies (2002).

32. Optical studies of 2DEG in ZnSe quantum wells in high magnetic fields
W.Ossau, G.V.Astakhov, D.R.Yakovlev, S.A.Crooker, A.Waag
Proc. 26th International Conference on the Physics of Semiconductors. Conference series numer 171, Edited by A.R.Long and J.H.Davies (2002).

31. Singlet and triplet states of trions in ZnSe-based quantum wells probed by magnetic fields to 50 Tesla
G.V.Astakhov, D.R.Yakovlev, S.A.Crooker, T.Barrick, A.B.Dzyubenko, T.Sander, W.Ossau, W.Faschinger, A.Waag
Proc. 26th International Conference on the Physics of Semiconductors. Conference series numer 171, Edited by A.R.Long and J.H.Davies (2002).

30. Heating of the magnetic-ion spin system in modulation doped ZnMnSe/ZnBeSe quantum wells by means of photoexcitation
D.Keller, G.V.Astakhov, D.R.Yakovlev, T.Barrick, S.A.Crooker, L.Hansen, W.Ossau, L.W.Molenkamp
Proc. 26th International Conference on the Physics of Semiconductors. Conference series numer 171, Edited by A.R.Long and J.H.Davies (2002).

29. Combined exciton and trion excitations in modulation doped quantum well structures
V. P. Kochereshko, G. V. Astakhov, D. R. Yakovlev, W. Ossau, G. Landwehr, T. Wojtowicz, G. Karczewski, J. Kossut
Proc. Nanostructures: Physics and Technology, 10th International Symposium, St.Petersburg, Russia, pp.594-597 (2002)
Proceedings of SPIE 5023, 533 (2003)

28. Singlet and triplet states of charged excitons in ZnSe-based QWs probed by high magnetic fields
D.R. Yakovlev, G.V. Astakhov, W. Ossau, Q. McCulloch, S.A. Crooker, A.B.Dzyubenko
Proc. Nanostructures: Physics and Technology, 10th International Symposium, St.Petersburg, Russia, pp.591-593 (2002)
Proceedings of SPIE 5023, 529 (2003)

27. Filling-factor dependence of magneto-luminescence in II-IV QWs with 2DEG
A. S. Gurevich, G. V. Astakhov, R. A. Suris, V. P. Kochereshko, D. R. Yakovlev, W. Ossau, S. A. Crooker, G. Karczewski
Proc. Nanostructures: Physics and Technology, 10th International Symposium, St.Petersburg, Russia, pp.93-100 (2002)
Proceedings of SPIE 5023, 82 (2003)

26. High magnetic field optical studies of 2DEG in modulation doped ZnSe quantum wells
W.Ossau, D.R.Yakovlev, G.V.Astakhov, A.Waag, C.J.Meinig, H.A.Nickel, B.D.McCombe, S.A.Crooker
Physica E 12, 512 (2002)

25. Binding Energy of charged excitons in ZnSe-based quantum wells
G.V.Astakhov, D.R.Yakovlev, V.P.Kochereshko, W.Ossau, W.Faschinger, J.Puls, F.Henneberger S.A.Crooker, Q.McCulloch, D.Wolverson, N.A.Gippius, A.Waag
Phys. Rev. B 65, 165335 (2002)

24. Combined exciton-electron and trion-electron excitations in ZnSe/ZnMgSSe modulation doped quantum wells
V.P.Kochereshko, G.V.Astakhov, D.R.Yakovlev, W.Ossau, W.Faschinger, G.Landwehr
Phys. Stat. Sol. (b) 229, 543 (2002)

23. Optical method for determination of carrier density in modulation doped quantum wells
G.V.Astakhov, V.P.Kochereshko, D.R.Yakovlev, W.Ossau, J.Nürnberger, W.Faschinger, G.Landwehr, T.Wojtowicz, G.Karczewski, J.Kossut
Phys. Rev. B 65, 115310 (2002)

2001

22. Inhomogeneous broadening of exciton lines in magneto-optical reflection from CdTe/CdMgTe quantum wells
G. V. Astakhov, V. A. Kosobukin, V. P. Kochereshko, D. R. Yakovlev, W. Ossau, G. Landwehr, T. Wojtowicz, G. Karczewski, J. Kossut
Eur. Phys. J. B 24, 7 (2001)

21. Excitons and trions modified by interaction with two dimensional electron gas
R.A.Suris, V.P.Kochereshko, G.V.Astakhov, D.R.Yakovlev, W.Ossau, J.Nürnberger, W.Faschinger, G.Landwehr, T.Wojtowicz, G.Karczewski, J.Kossut
Phys. Stat. Sol. (b) 227, 343 (2001)

20. Trions in ZnSe-based quantum wells probed by 50 T magnetic fields
D.R.Yakovlev, G.V.Astakhov, W.Ossau, S.A.Crooker, K.Uchida, N.Miura, A.Waag, N.A.Gippius, A.Yu.Sivachenko, A.B.Dzyubenko
Phys. Stat. Sol. (b) 227, 353 (2001)

19. Combined exciton-trion excitation in modulation doped quantum well structures
W.Ossau, V.P.Kochereshko, G.V.Astakhov, D.R.Yakovlev, G.Landwehr, T.Wojtowicz, G.Karczewski, J.Kossut
Physica B 298, 315 (2001)

2000

18. Exciton-trion coupling in modulation doped quantum well structures
V.P.Kochereshko, G.V.Astakhov, R.A.Suris, D.R.Yakovlev, W.Ossau, J.Nürnberger, W.Faschinger, G.Landwehr
Proc. 25th International Conference on the Physics of Semiconductors. Conference series numer 171, Edited by N.Miura and T.Ando, pp.217-232 (2000)

17. Excitons and trions in II-IV quantum wells with modulation doping
V.P.Kochereshko, G.V.Astakhov, D.R.Yakovlev, W.Ossau, G.Landwehr, T.Wojtowicz, G.Karczewski, J.Kossut
Phys. Stat. Sol. (b) 220, 345 (2000)

16. Oscillator strength of trion (X-) states in ZnSe-based quantum wells
G. V. Astakhov, V. P. Kochereshko, D. R. Yakovlev, W. Ossau, J. Nürnberger, W. Faschinger, G. Landwehr
Phys. Rev. B 62, 10345 (2000)

15. Combined exciton-electron processes in modulation doped quantum well structures
V.P.Kochereshko, D.R.Yakovlev, G.V.Astakhov, R.A.Suris, J.Nürnberger, W.Faschinger, W.Ossau, G.Landwehr, T.Wojtowicz, G.Karczewski, J.Kossut
Optical properties of Semiconductor Nanostructures: NATO Science Series, 3. High Technology, Vol. 81 (Kluwer Academic Publishers), Eds. M.L.Sadowski, M.Potemski and M.Grynberg, pp.299-308 (2000)

14. Reflectivity studies of trion (X-) and exciton (X) states in ZnSe/ZnMgSSe QWs
G. V. Astakhov, V. P. Kochereshko, D. R. Yakovlev, R. A. Suris, W. Ossau, J. Nürnberger, W. Faschinger and G. Landwehr
Proc. Nanostructures: Physics and Technology, 8th International Symposium, St.Petersburg, Russia, pp.260-263 (2000)

13. Spectroscopy of negatively charged excitons interacting with 2DEG in CdTe/(Cd,Mg)Te QWs
G. V. Astakhov, V. P. Kochereshko, D. R. Yakovlev, R. A. Suris, W. Ossau, G. Landwehr, T. Wojtowicz, G. Karczewski, J. Kossut
Proc. Nanostructures: Physics and Technology, 8th International Symposium, St.Petersburg, Russia, pp.248-251 (2000)

12. Magneto-optics of charged excitons in ZnSe/ZnMgSSe quantum wells
D. R. Yakovlev, H. A. Nickel, B. D. McCombe, A. Keller, G. V. Astakhov, V.P. Kochereshko, W. Ossau, J. Nürnberger, W. Faschinger, G. Landwehr
J. Crystal Growth 214-215, 823 (2000)

11. Oscillator strength of excitons and charged excitons in ZnSe/ZnMgSSe QWs with a 2DEG of low density
W. Ossau, D. R. Yakovlev, G. Astakhov, V. P. Kochereshko, J. Nürnberger, W. Faschinger, G. Landwehr
Physica E 6, 187 (2000)

10. Charged exciton dynamics in ZnSe/ZnMgSSe QWs
D. R .Yakovlev, J. Puls, G. V. Mikhailov, G. V. Astakhov, V. P. Kochereshko, W. Ossau, J. Nürnberger, W. Faschinger, F. Henneberger, G. Landwehr
Phys. Stat. Sol. (a) 178, 501 (2000)

1999

9. Charged excitons in ZnSe-based quantum wells
G. V. Astakhov, D. R. Yakovlev, V. P. Kochereshko, W. Ossau, J. Nürnberger, W. Faschinger, G. Landwehr
Phys. Rev. B 60, R8485(R) (1999)

8. Photoluminescence study of InAs quantum dots grown on misoriented GaAs substrates
G. V. Astakhov*, V. P. Kochereshko, D. G. Vasilyev, V. P. Evtikhiev, V. E. Tokranov, I. V. Kudryashov, G. V. Mikhailov
Semiconductors 33, 988 (1999)

7. Charged excitons in ZnSe-based QWs
D. R. Yakovlev, G. V. Astakhov, V. P. Kochereshko, A. Keller, W. Ossau, G. Landwehr
Proc. Nanostructures: Physics and Technology, 7th International Symposium, St.Petersburg, Russia, pp.393-398 (1999)

6. Magneto-reflectivity studies of ZnSe/ZnMgSSe QWs with a low density 2DEG
G. V. Astakhov, D. R. Yakovlev, V. P. Kochereshko, G. V. Mikhailov, W. Ossau, J. Nürnberger, W. Faschinger, G. Landwehr
Proc. Nanostructures: Physics and Technology, 7th International Symposium, St.Petersburg, Russia, pp.352-354 (1999)

5. Exciton-electron interaction in quantum wells with a two dimensional electron gas of low density
W. Ossau, D.R. Yakovlev, C.Y. Hu, V.P. Kochereshko, G.V.Astakhov, R.A. Suris, P.C.M. Christianen, J.C. Maan
Physics of the Solid State 41, 751 (1999)

4. Radiative recombination of electrons and holes localized at GaAs/AlGaAs heterointerface under magnetic fields
G.V.Astakhov, A.A.Kiselev, V.P.Kochereshko, M.M.Moiseeva, A.V.Platonov
Semicond. Sci. Technol. 14, 110 (1999)

1998

3. Magneto-optical study of ZnSe-based quantum wells
W.Ossau, D.R.Yakovlev, U.Zehnder, G.V.Astakhov, A.V.Platonov, V.P.Kochereshko, J.Nürnberger, W.Faschinger, M.Keim, A.Waag, G.Landwehr, P.C.M.Christianen, J.C.Maan, N.A.Gippius and S.G.Tikhodeev
Physica B 256-258, 323-326 (1998)

2. Model study of inhomogeneous line broadening in excitonic spectra of quantum wells
G.V. Astakhov, V.P. Kochereshko, V.A. Kosobukin, D.R. Yakovlev, T. Wojtowicz, G. Karczewski, J. Kossut, W. Ossau, G. Landwehr
Acta Physica Polonica A 94, 235 (1998)

1. Polariton reflectance spectra from thin ZnxSe1-x layers
G.V. Astakhov, V.P. Kochereshko, A.V. Platonov, D.R. Yakovlev, W. Ossau, W. Faschinger, G. Landwehr
Phisics of the Solid State 40, 798 (1998)