Micro channeling study of crystal damage in ZnO by ion implantation


Micro channeling study of crystal damage in ZnO by ion implantation

Munnik, F.; Grambole, D.; Bischoff, L.; Grötzschel, R.

The study of crystal damage by ion implantation with high current densities is important to obtain better insights in the processes taking place during ion implantation (under ex-treme conditions). The combination of a Focussed Ion Beam (FIB) and an ion microprobe with channeling capability within the same institute facilitates this type of research by enabling small implanted areas to be analysed. In this study Ga was implanted by FIB into ZnO at different ion fluxes and fluences. The fluences were varied from 1013 to 1017 at/cm² and fluxes of 5•1013 at. cm-²s-1 and 5•1018 at. cm-²s-1 were used. The implanted areas were analysed with a 1 MeV He+ ion beam focussed to well below the size of the implanted area (about 100 x 100 µm²). The damage of the sample caused by the ion microprobe was also studied and the fluence for the analysis has been chosen so low that no significant damage occurs.
The results of the channeling measurements are presented and the effects of flux and flu-ence on the crystal damage are discussed. It can be noted that the effects of the flux are relatively minor and crystal damage in ZnO occurs only at high fluences

Keywords: FIB; Ion microprobe; damage

  • Lecture (Conference)
    18th International Conference on Ion Beam Analysis, 23.-28.09.2007, Hyderabad, India

Permalink: https://www.hzdr.de/publications/Publ-10230
Publ.-Id: 10230