Reactivation of damaged rare earth luminescence centers in ion-implanted Metal-Oxide-Silicon light emitting devices


Reactivation of damaged rare earth luminescence centers in ion-implanted Metal-Oxide-Silicon light emitting devices

Prucnal, S.; Rebohle, L.; Nazarov, A. N.; Skorupa, W.

Charge trapping and quenching of the electroluminescence (EL) in SiO2 layers implanted by Ge and rare earth (RE) ions during hot electron injection were investigated. In case of the SiO2:Ge layer the EL quenching is caused by the transformation of the luminescent defects (≡Ge-Si≡ or ≡Ge-Ge≡) to optically not active centers during hot electron excitation, whereas the EL from rare earth centers is quenched due to the electron trapping by RE-centers or their surrounding but not due to their optical deactivation. Therefore, the flash lamp post-injection annealing releasing trapped electrons reactivates RE centers and increases the operating time of Metal-Oxide-Silicon light emitting devices (MOSLEDs).

Keywords: charge trapping; rare earth; luminescence centers; MOSLED; FLA

  • Applied Physics B 91(2008)1, 123-126

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Publ.-Id: 10666