Giant stability enhancement of rare-earth implanted SiO2 light-emitting devices by an additional SiON protection layer


Giant stability enhancement of rare-earth implanted SiO2 light-emitting devices by an additional SiON protection layer

Sun, J. M.; Rebohle, L.; Prucnal, S.; Helm, M.; Skorupa, W.

The electrical stability of rare-earth implanted SiO2 light emitting devices was improved by using a SiON dielectric buffer layer in an indium-tin-oxide/SiON/SiO2:Tb /Si device structure. At the expense of a small increase of the electroluminescence threshold voltage, a large increase of the breakdown electric field from 7.5 to 10.5 MV/cm was obtained in the SiO2:Tb layer, and the maximum injection current density was increased by three orders of magnitude from 4 mA/cm2 to 4 A/cm2 . The operation time of the electroluminescence devices was increased by more than three orders of magnitude at an injection current density of ~4 mA/cm2. Our experimental results are consistent with a theoretical model proposed for designing a stable and efficient thin-film light emitting device containing double-stacked dielectric layers.

Keywords: rare earth; electroluminescence; MOS; Terbium; Si-based light emission

  • Applied Physics Letters 92(2008)7, 071103

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Publ.-Id: 11017