Dependence of the Silicon Detector Response to Heavy Ions on the Direction of Incidence: Computer Simulations Versus Experimental Data
Dependence of the Silicon Detector Response to Heavy Ions on the Direction of Incidence: Computer Simulations Versus Experimental Data
Pilz, W.; von Borany, J.; Grötzschel, R.; Jiang, W.; Posselt, M.; Schmidt, B.
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Nuclear Instruments and Methods in Physics Research A 419 (1998) 137-145
DOI: 10.1016/S0168-9002(98)01151-6
Cited 11 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-1107