Manganese implanted GaAs films


Manganese implanted GaAs films

Bürger, D.; Schmidt, H.; Xu, Q.; Kolitsch, A.; Winnerl, S.; Schneider, H.; Zhou, S.; Potzger, K.; Helm, M.; Biehne, G.; Gottschalch, V.

Electron spin preservation has been proven in unmagnetic GaAs over several μm by time-resolved luminescence measurements. The synthesis of Mn-alloyed GaAs has introduced a controllable spin degree of freedom in the GaAs device technology. Approx. 1 μm thick n-type (Si) and p-type (Zn) GaAs films have been grown on highly conducting n- and p-GaAs substrates by metalorganic chemical vapour deposition. For magnetotransport measurements reference samples have been grown on insulating substrates. Mn+ ion beam implantation with 300/150 keV at 200°C yielded a boxlike Mn-implantation profile of the 250 nm thick GaAs surface layer with a nominal implantation dose dependent Mn content of 1 and 5 at%. Rapid thermal annealing has been performed at 650°C for 10 s. Magnetic properties have been investigated by means of SQUID-magnetometry. The relation between concentration of free charge carriers, defect formation and magnetoresistance effects in manganese implanted GaAs will be discussed.

Keywords: GaAs; ion implantation; magnetic semiconductor; magnetoresistance; DLTS

  • Poster
    72. Annual Meeting of the DPG and DPG Spring Meeting of the Condensed Matter Division, 25.-29.02.2008, Berlin, Germany

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Publ.-Id: 11078