Annealing and Recrystallization of Amorphous Silicon Carbide Produced by Ion Implantation
Annealing and Recrystallization of Amorphous Silicon Carbide Produced by Ion Implantation
Höfgen, A.; Heera, V.; Eichhorn, F.; Skorupa, W.
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Journal of Applied Physics Vol. 84, Number 9, 1. Nov. 1998, pp. 4769-4774
DOI: 10.1063/1.368801
Cited 61 times in Scopus -
Lecture (Conference)
ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-1147
