Terahertz emission from a large-area GaInAsN emitter


Terahertz emission from a large-area GaInAsN emitter

Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.

A large-area interdigitated terahertz (THz) emitter based on molecular-beam epitaxy grown GaInAsN with an additional AlGaAs heterostructure is investigated as THz source for excitation wavelengths between 1.1 and 1.5 µm. The optical and electrical properties of the emitter material exhibit absorption up to a wavelength of 1.5 µm and have a resistivity of 550 kΩ cm. Terahertz waves were detected by electro-optical sampling with a bandwidth exceeding 2 THz. Best performance is found for excitation wavelengths below 1.35 µm. Furthermore the emission properties for several excitation powers are investigated showing a linear increase of THz emission.

Keywords: TERAHERTZ; SPECTROSCOPY; ANTENNAS; BEAMS

Permalink: https://www.hzdr.de/publications/Publ-11663
Publ.-Id: 11663