Vertical Gradient Freeze growth in a combined magnetic AC/DC field


Vertical Gradient Freeze growth in a combined magnetic AC/DC field

Pätzold, O.; Lantzsch, R.; Grants, I.; Stelter, M.; Gerbeth, G.

The Vertical Gradient Freeze (VGF) method is an important technology for the melt growth of bulk compound semiconductors. The structural perfection of the crystals and the distribution of dopants in the material are closely connected to the conditions of heat and mass transport in the liquid phase. The application of external magnetic fields allows for tailoring the melt flow and, hence, gives the possibility to optimize the quality of the crystals and the yield of the growth process.
In this paper experimental and numerical results are presented, showing the influence of a combined traveling magnetic field (TMF) and steady axial magnetic field (DC) on the VGF growth of semiconducting GaAs and Ge single crystals. The quality of the crystals is characterized in terms of the interface deflection, axial/radial macrosegregation and microsegregation. The numerical simulations of the VGF growth are performed using the commercial code CrysMAS. The TMF melt flow and its influence on the interface deflection as well as the resulting local v. Mises stress are calculated on the basis of a global thermal model of the equipment.

Keywords: Vertical Gradient Freeze; crystal growth; traveling magnetic field

  • Contribution to proceedings
    7th International PAMIR Conference on Fundamental and Applied MHD, 08.-12.09.2008, Presqu´île de Giens, France
    Fundamental and Applied MHD, Reims: Universite de Reims Champagne-Ardenne, 633-635
  • Lecture (Conference)
    7th International PAMIR Conference on Fundamental and Applied MHD, 08.-12.09.2008, Presqu´île de Giens, France

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Publ.-Id: 11711