Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 film and subsequent hydrogen transfer of Si layer


Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 film and subsequent hydrogen transfer of Si layer

Tyschenko, I. E.; Voelskow, M.; Cherkov, A. G.; Popov, V. P.

Strong decrease in the carrier mobility of the nanometer-thick silicon films imposes a limitation on the application of silicon-on-insulator (SOI) structures in the current silicon planar CMOS technology. The formation of SiGe-heterostructures-on-insulator (SGOI) is a way to increase the hole mobility in the nanometer-scale layers. In this work, we present the results on the interface mediated endotaxial growth of nanometer-thick Ge film from the Ge+-ion implanted SiO2 layer of the SOI structure

Keywords: SOI; SiGe; SGOI; Ge implantation

  • Poster
    IBMM 08 - 16th International Conference on Ion Beam Modification of Materials, 31.08.-05.09.2008, Dresden, Germany
  • Nuclear Instruments and Methods in Physics Research B 267(2009), 1277-1280

Permalink: https://www.hzdr.de/publications/Publ-11721
Publ.-Id: 11721