Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and annealing in CO atmosphere
Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and annealing in CO atmosphere
Voelskow, M.; Pécz, B.; Stoemenos, J.; Skorupa, W.
High quality 3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon-carbon clusters at the SiO2/Si interface facilitating the growth of 3C-SiC nanocrystallites.
Keywords: nanocrystallites; 3C-SiC; carbon implantation
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Poster
IBMM 08 - 16th International Conference on ion Beam Modification of Materials, 31.08.-05.09.2008, Dresden, Germany - Nuclear Instruments and Methods in Physics Research B 267(2009), 1364-1367
Permalink: https://www.hzdr.de/publications/Publ-11722
Publ.-Id: 11722