Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and annealing in CO atmosphere


Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and annealing in CO atmosphere

Voelskow, M.; Pécz, B.; Stoemenos, J.; Skorupa, W.

High quality 3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon-carbon clusters at the SiO2/Si interface facilitating the growth of 3C-SiC nanocrystallites.

Keywords: nanocrystallites; 3C-SiC; carbon implantation

  • Poster
    IBMM 08 - 16th International Conference on ion Beam Modification of Materials, 31.08.-05.09.2008, Dresden, Germany
  • Nuclear Instruments and Methods in Physics Research B 267(2009), 1364-1367

Permalink: https://www.hzdr.de/publications/Publ-11722
Publ.-Id: 11722